RFN5BM3SFHTL ROHM

RFN5BM3SFHTL electronic component of ROHM
RFN5BM3SFHTL ROHM
RFN5BM3SFHTL Diodes - General Purpose, Power, Switching
RFN5BM3SFHTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RFN5BM3SFHTL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN5BM3SFHTL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. RFN5BM3SFHTL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Fast Recvry 350V Vr TO-252(DPAK) 5A Io
Datasheet: RFN5BM3SFHTL Datasheet (PDF)
Price (USD)
1: USD 1.6895 ea
Line Total: USD 1.69 
Availability : 3718
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 1.6895
10$ 1.1874
100$ 0.9715
500$ 0.8353
1000$ 0.7922
2500$ 0.7638
5000$ 0.7331

Availability 3718
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6895
10$ 1.1874
100$ 0.9715
500$ 0.8353
1000$ 0.7922
2500$ 0.7638
5000$ 0.7331

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Qualification
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN5BM3SFHTL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN5BM3SFHTL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFN5BM3SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification 2.3 2.3 TO-252 Features Cathode 1) Low switching loss Structure ROHM : TO-252 High current overload capacity 2) JEITA : SC-63 1 : Manufacture Date Open Anode Construction Taping Dimensions (Unit : mm) 2.00.05 1.550.1 4.00.1 8.00.1 1.550.1 0.40.1 Silicon epitaxial planar type 0 TL 3.00.1 3.00.1 6.80.1 8.00.1 2.70.2 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 350 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 350 V R I 60Hz half sin wave , Resistive load T =95C Average rectified foward current c 5 A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 50 j A FSM T - 150 Operating junction temperature C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =5A Forward voltage V -1.1 1.5 V F F I V =350V Reverse current -0.05 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 20 30 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 1/4 10.10.1 00.5 13.50.2 7.50.05 2.50.1 16.00.2 10.10.1 3.0 2.0 6.0Data Sheet RFN5BM3SFH Electrical characteristic curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j 1 T = 150 C 100 j T = 25 C j T = 125 C 10 j 0.1 T = 75 C j 1 T = 25 C j 0.01 0.1 0 50 100 150 200 250 300 350 0 500 1000 1500 2000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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