Product Information

SCS320AHGC9

SCS320AHGC9 electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 650V;20A;115W SiC SBD TO-220ACP

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.6592 ea
Line Total: USD 10.66

289 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1375 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 9.752
10 : USD 7.889
100 : USD 7.291
250 : USD 7.061
500 : USD 6.6125
1000 : USD 6.1065
3000 : USD 6.1065

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Hts Code
LoadingGif

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SCS320AH Datasheet SiC Schottky Barrier Diode lOutline TO-220ACP (1) V 650V R I 20A F Q 47nC C (3) (2) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Cathode (3) Anode 4) High surge current capability (2) (3) lPackaging specifications Packaging Tube Reel size (mm) - lConstruction Tape width (mm) - Silicon carbide epitaxial planar type Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS320AH lAbsolute maximum ratings (T = 25C) j Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 650 V RM V Reverse voltage (DC) 650 V R Continuous forward current (T = 125C) I 20 A c F PW=10ms sinusoidal, T =25C 123 A j Surge non- PW=10ms sinusoidal, T =150C I repetitive forward 104 A j FSM current PW=10 ms square, T =25C 450 A j 1 * Repetitive peak forward current I 81 A FRM 2 1PW 10ms, T =25C 75 j A s 2 2 i t value i dt 2 1PW 10ms, T =150C 54 j A s 2 * Total power disspation P 115 W D T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg *1 T =100C, T =150C, Duty cycle=10% *2 T =25C c j c www.rohm.com TSQ50221-SCS320AH 2019 ROHM Co., Ltd. All rights reserved. 1/5 18.Nov.2019-Rev.002 TSZ2211114001Datasheet SCS320AH lElectrical characteristics (T = 25C) j Values Parameter Symbol Conditions Unit Min. Typ. Max. DC blocking voltage V I =100mA 650 - - V DC R I =20A,T =25C - 1.35 1.50 V F j Forward voltage V I =20A,T =150C - 1.44 1.71 V F F j I =20A,T =175C - 1.50 - V F j V =650V,T =25C - 0.06 100 mA R j I V =650V,T =150C Reverse current - 4 400 mA R R j V =650V,T =175C - 12 - mA R j V =1V,f=1MHz - 1000 - pF R Total capacitance C V =650V,f=1MHz - 91 - pF R Total capacitive charge Q V =400V,di/dt=350A/ms - 47 - nC C R t Switching time V =400V,di/dt=350A/ms - 25 - ns C R Non-repetetive E L=1mH - 220 - mJ ava Avaranche Energy lThermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. R Thermal resistance - - 0.87 1.3 K/W th(j-c) lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit -4 -5 R C 8.1310 9.1710 th1 th1 -2 -4 R C 4.0710 K/W 5.9410 Ws/K th2 th2 -1 -3 R 8.3110 C 1.6810 th3 th3 R R T th,n T th1 j c PD C C C th1 th2 th,n T a www.rohm.com TSQ50221-SCS320AH 2019 ROHM Co., Ltd. All rights reserved. 2/5 18.Nov.2019-Rev.002 TSZ2211115001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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