SST4403T116 ROHM

SST4403 / UMT4403U3 PNP Medium Power Transistor Datasheet (Switching) llOutline Parameter Value SOT-23 SOT-323 V -40V CEO I -600mA C SST4403 UMT4403U3 (SST3) (UMT3) llFeatures 1)BV =-40V(Min.) at I =-1mA CEO C llInner circuit 2)Complements the SST4401/UMT4401U3 llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 SST4403 2924 T116 180 8 3000 R2T (SST3) SOT-323 UMT4403U3 2021 T106 180 8 3000 R2T (UMT3) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -40 V CBO Collector-emitter voltage V -40 V CEO V Emitter-base voltage -6 V EBO I Collector current -600 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/8 20190405 - Rev.005 2019 ROHM Co., Ltd. All rights reserved. SST4403 / UMT4403U3 Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -100A -40 - - V CBO C Collector-emitter breakdown BV I = -1mA -40 - - V CEO C voltage BV I = -100A Emitter-base breakdown voltage -5 - - V EBO E I V = -35V Collector cut-off current - - -100 nA CBO CB I V = -5V Emitter cut-off current - - -100 nA EBO EB V 1 I = -150mA, I = -15mA CE(sat) - - -400 mV C B Collector-emitter saturation voltage *3 V 2 I = -500mA, I = -50mA - - -750 mV CE(sat) C B V 1 I = -150mA, I = -15mA BE(sat) -750 - -950 mV C B Base-emitter saturation voltage *3 V 2 I = -500mA, I = -50mA - - -1.3 V BE(sat) C B h 1 V = -1V, I = -100A 30 - - - FE CE C h 2 V = -1V, I = -1mA 60 - - - FE CE C DC current gain h 3 V = -1V, I = -10mA 100 - - - FE CE C h 4 V = -1V, I = -150mA 100 - 300 - FE CE C *3 h 5 V = -2V, I = -500mA 20 - - - CE C FE V = -10V, I = 0A CB E C Output capacitance - - 8.5 pF ob f = 100kHz V = -0.5V, I = 0A BE C C Input capacitance - - 30 pF ib f = 100kHz V = -10V, I = 20mA CE E f Transition frequency 200 - - MHz T f = 100MHz V -30V CC Delay time t - - 15 ns d I = -150mA C I = -15mA, R = 200 B1 L Rise time t - - 20 ns r See test circuit V -30V CC t Storage time - - 225 ns stg I = -150mA C I = -15mA B1 I = 15mA, R = 200 B2 L t Fall time - - 30 ns f See test circuit *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). *3 Pulsed www.rohm.com 2/8 20190405 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.