UMT2907AT106 ROHM

UMT2907AT106 electronic component of ROHM
UMT2907AT106 ROHM
UMT2907AT106 Bipolar Transistors - BJT
UMT2907AT106  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UMT2907AT106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMT2907AT106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. UMT2907AT106
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 60V 0.6A
Datasheet: UMT2907AT106 Datasheet (PDF)
Price (USD)
1: USD 0.3488 ea
Line Total: USD 0.35 
Availability : 617
  
Ship by Mon. 15 Sep to Wed. 17 Sep
QtyUnit Price
1$ 0.3488
10$ 0.215
100$ 0.1284
500$ 0.088
1000$ 0.0792
3000$ 0.0671
6000$ 0.0605
9000$ 0.0528
24000$ 0.0517

Availability 617
Ship by Mon. 15 Sep to Wed. 17 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3488
10$ 0.215
100$ 0.1284
500$ 0.088
1000$ 0.0792
3000$ 0.0671
6000$ 0.0605
9000$ 0.0528
24000$ 0.0517


Availability 5073
Ship by Wed. 17 Sep to Tue. 23 Sep
MOQ : 1839
Multiples : 1
QtyUnit Price
1839$ 0.1414
1902$ 0.1368
2500$ 0.1327
5000$ 0.1242


Availability 11465
Ship by Wed. 17 Sep to Tue. 23 Sep
MOQ : 991
Multiples : 1
QtyUnit Price
991$ 0.2626
1493$ 0.1742
2000$ 0.1638
3000$ 0.1462
6000$ 0.117


Availability 8730
Ship by Wed. 17 Sep to Tue. 23 Sep
MOQ : 1839
Multiples : 1
QtyUnit Price
1839$ 0.1414
1902$ 0.1368
2500$ 0.1327
5000$ 0.1242

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMT2907AT106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMT2907AT106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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UMT2907A Datasheet PNP Medium Power Transistor (Switching) llOutline SOT-323 Parameter Value SC-70 V -60V CEO I -600mA C UMT3 llFeatures llInner circuit 1)BV -60V (I =-10mA) CEO C llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 UMT2907A 2021 T106 180 8 3000 R2F (UMT3) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -60 V CEO V Emitter-base voltage -5 V EBO I Collector current -600 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/4 20161025 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. UMT2907A Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = -10A Collector-base breakdown voltage -60 - - V CBO C Collector-emitter breakdown BV I = -10mA -60 - - V CEO C voltage BV I = -10A Emitter-base breakdown voltage -5 - - V EBO E I V = -50V - - -100 nA CBO CB Collector cut-off current I V = -30V - - -100 nA CES CE I V = -3V Emitter cut-off current - - -100 nA EBO EB V 1 I = -150mA, I = -15mA - - -400 mV CE(sat) C B Collector-emitter saturation voltage *2 V 2 I = -500mA, I = -50mA - - -1.6 V CE(sat) C B V 1 I = -150mA, I = -15mA - - -1.3 V BE(sat) C B Base-emitter saturation voltage *2 V 2 I = -500mA, I = -50mA - - -2.6 V BE(sat) C B h 1 V = -10V, I = -100A 75 - - - FE CE C h 2 V = -10V, I = -1mA 100 - - - FE CE C h 3 DC current gain V = -10V, I = -10mA 100 - - - FE CE C *2 V = -10V, I = -150mA 100 - 300 - h 4 CE C FE *2 V = -10V, I = -500mA 50 - - - h 5 FE CE C V = -10V, I = 0A CB E C Output capacitance - - 8 pF ob f = 100kHz V = -2V, I = 0A BE C C Input capacitance - - 30 pF ib f = 100kHz V = -20V, I = 50mA CE E f Transition frequency 200 - - MHz T f = 100MHz *2 Turn-On Delay time - - 50 ns t on V -30V, I = -150mA CC C I = -15mA, R = 200 B1 L *2 Delay time t - - 10 ns d V = 500mV BE(off) *2 See test circuit Rise time - - 40 ns t r *2 V -30V Turn-Off Delay time t - - 100 ns CC off I = -150mA C *2 Storage time t - - 80 ns I = -15mA stg B1 I = 15mA, R = 200 B2 L *2 Fall time t - - 30 ns See test circuit f *1 Each terminal mounted on a reference land. *2 Pulsed www.rohm.com 2/4 20161025 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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