UMX18NTN ROHM

UMX18NTN electronic component of ROHM
UMX18NTN ROHM
UMX18NTN Bipolar Transistors - BJT
UMX18NTN Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UMX18NTN Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMX18NTN Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. UMX18NTN
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT DUAL NPN 12V 500MA
Datasheet: UMX18NTN Datasheet (PDF)
Price (USD)
5: USD 0.2338 ea
Line Total: USD 1.17 
Availability : 2851
  
Ship by Fri. 26 Sep to Thu. 02 Oct
QtyUnit Price
5$ 0.2338
50$ 0.187
150$ 0.1227
500$ 0.0985
3000$ 0.0891
6000$ 0.0844

 UMX18NTN More Buying Options & Price Grid(s)
Availability 2851
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2338
50$ 0.187
150$ 0.1227
500$ 0.0985
3000$ 0.0891
6000$ 0.0844

Availability 1938
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7288
10$ 0.4475
100$ 0.2645
500$ 0.2013
1000$ 0.1848
3000$ 0.1562
6000$ 0.1441
9000$ 0.1364
24000$ 0.1331

Availability 3453
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 484
Multiples : 1
QtyUnit Price
484$ 0.5382
926$ 0.2808
1000$ 0.2613
2000$ 0.23

Availability 2657
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1021
Multiples : 1
QtyUnit Price
1021$ 0.2547
1059$ 0.2456
1095$ 0.2375
2500$ 0.2216

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMX18NTN from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMX18NTN and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

EMX18 / UMX18N Datasheet General purpose transistor (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 SOT-363 V 12V CEO I 500mA C EMX18 UMX18N (EMT6) (UMT6) llFeatures llInner circuit 1)Two 2SC5585 chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMX18 1616 T2R 180 8 8000 X18 (EMT6) SOT-363 UMX18N 2021 TN 180 8 3000 X18 (UMT6) www.rohm.com 1/7 20150910 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.EMX18 / UMX18N Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP Power dissipation EMX18 150 *2 *3 P mW D UMX18N 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV I = 10A Emitter-base breakdown voltage 6 - - V EBO E I V = 15V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 90 250 mV CE(sat) C B h V = 2V, I = 10mA DC current gain 270 - 680 - FE CE C V = 2V, I = -10mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7.5 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20150910 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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