Power management (dual transistors) VT6X11 z Structure z Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) z Features 0 ~ 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 z Applications Current mirror circuits Abbreviated symbol : X11 UNIT : mm Each lead has same dimensions. z Packaging specifications z Inner circuit Package Taping (6) (5) (4) Code T2R (1) Base (Tr1) (2) Emitter (Tr1) Basic ordering 8000 (3) Emitter (Tr2) Type unit (pieces) Tr2 (4) Collector (Tr2) VT6X11 (5) Collector (Tr1) Tr1 (5) Base (Tr2) (6) Collector (Tr1) z Absolute maximum ratings (Ta=25C) (6) Base (Tr2) (1) (2) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO 20 V VCEO 20 V Collector-emitter voltage Emitter-base voltage VEBO 5 V IC 200 mA Collector current 1 ICP 400 mA Total 150 mW 2 PD Power dissipation Element 120 mW C Junction temperature Tj 150 Range of storage temperature Tstg 55 to +150 C 1 Pw=1mS Single pulse 2 Each terminal mounted on a recommended land z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 20 V IC=1mA BVCBO 20 V IC=50A Collector-base breakdown voltage Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cut-off current ICBO 0.1 A VCB=20V Emitter cut-off current IEBO 0.1 A VEB=5V Collector-emitter saturation voltage VCE(sat) 0.30 V IC=100mA, IB=10mA 0.12 DC current gain hFE 120 560 VCE=2V, IC=1mA DC current gain ratio hFE (Tr1) / hFE (Tr2) 0.9 1.1 VCE=2V, IC=1mA Transition frequency fT 400 MHz VCE=10V, IE=10mA, f=100MHz Output capacitance Cob 2 pF VCB=10V, IE=0A, f=1MHz www.rohm.com 2009.06 - Rev.A 1/2 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs 1.2 0.1 0.92 0.1 0.14 0.14 0.2 0.1 0.2 0.1 VT6X11 Data Sheet z Electrical characteristics curves IB=0.9mA IB=0.8mA IB=1.0mA 100 1000 1000 VCE=2V VCE =2V IB=0.7mA IB=0.6mA 80 100 Ta=125C IB=0.5mA 25C 60 10 -55C IB=0.4mA 100 IB=0.3mA 40 1 IB=0.2mA 20 Ta=125C 0.1 IB=0.1mA 25C Ta=25C -55C IB=0mA 0 0.01 10 012 345 0 0.2 0.4 0.6 0.8 1 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : BASE TO EMITTER VOLTAGE : VBE (V) VCE (V) 1 1 1000 Ta=25C IC/IB= 10/1 VCE = 10V Ta=25C Ta=125C IC/IB = 20/1 25C IC/IB =10/1 -55C 0.1 0.1 100 0.01 0.01 10 1 10 100 1000 1 10 100 1000 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) 100 Cib 10 Cob 1 Ta=25C f=1MHz IE=0 IC=0 0 0.01 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com 2009.06 - Rev.A 2/2 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs Cob (pF) COLLECTOR SATURATION Cib (pF) VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY :fT (MHz) DC CURENT GAIN : hFE