With Infinite heatsink 10ms 100ms 1ms DC 3A I C=1A 5A 15A 10A LOW VCE (sat) 2SC4131 Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol Ratings Unit Symbol Conditions Ratings Unit 5.50.2 15.60.2 3.45 0.2 VCBO 100 ICBO VCB=100V 10max m A V VCEO 50 V IEBO VEB=15V 10max m A VEBO 15 V(BR)CEO IC=25mA 50min V V 3.30.2 IC 15(Pulse25) A hFE VCE=1V, IC=5A 60to360 a b IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V A PC VBE(sat) IC=5A, IB=80mA 1.2max V 60(Tc=25C) W 1.75 0.8 Tj 150 fT VCE=12V, IE=1A 18typ MHz C 2.15 Tstg COB VCB=10V, f=1MHz 210typ pF 55 to +150 C +0.2 1.05 -0.1 +0.2 5.450.1 5.450.1 0.65 -0.1 3.35 n Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) () (A) (V) (V) (A) (A) (m s) (m s) (m s) a. Part No. 20 5 0.08 2.0typ BEC b. Lot No. 4 10 5 0.08 0.5typ 0.4typ I C VCE Characteristics (Typical) VCE(sat) IB Characteristics (Typical) I C VBE Temperature Characteristics (Typical) (VCE=1V) 1.3 15 15 12 1.0 10 8 0.5 5 4 0 0 0 0 24 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.5 Collector-Emitter Voltage VCE(V) Base Current I B(A) Base-Emittor Voltage VBE(V) hFE IC Characteristics (Typical) hFE IC Temperature Characteristics (Typical) j-a t Characteristics (VCE=1V) (VCE=1V) 1000 1000 3 500 500 1 0.5 100 100 70 70 0.3 0.02 0.1 1 10 15 0.02 0.1 1 10 15 1 10 100 1000 Collector Current I C(A) Collector Current I C(A) Time t(ms) tontstgt f IC Characteristics (Typical) Safe Operating Area (Single Pulse) Pc Ta Derating 5 40 60 VCC 20V tstg I C=5A IB1=IB2 =80mA 10 40 1 5 t f 0.5 20 1 ton Without Heatsink Natural Cooling Without Heatsink 0.1 3.5 0.08 0.4 0 0.1 0.5 1 5 10 3 5 10 50 100 0 50 100 150 Collector Current I C(A) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) 90 Typ 80mA 40mA 25mA 15mA I B=7mA 125C 85mA 25C 30C 125C (Case Temp) 25C (Case Temp) 30C (Case Temp) DC Current Gain hFE Switching Time tontstgt f(s) Collector Current I C(A) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 0.3 16.2 23.0 9.50.2 1.6 0.80.2 3.3 5.5 3.0X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by Sanken manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H MJ15024/WS MJ15025/WS BC546/116 BC556/FSC BC557/116 BSW67A HN7G01FU-A(T5L,F,T NJVMJD148T4G NSVMMBT6520LT1G NTE187A NTE195A NTE2302 NTE2330 NTE2353 NTE316 IMX9T110 NTE63 NTE65 C4460 SBC846BLT3G 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA1727TLP 2SA2126-E 2SB1202T-TL-E 2SB1204S-TL-E 2SC5488A- TL-H 2SD2150T100R SP000011176 FMC5AT148 2N2369ADCSM 2SB1202S-TL-E 2SC2412KT146S 2SC4618TLN 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E BC557B TTC012(Q) BULD128DT4 JANTX2N3810 Jantx2N5416 US6T6TR KSF350 068071B