2SC4495 Sanken

100ms With Infinite heatsink 10ms DC 1ms 100x2 High hFE LOW VCE (sat) 2SC4495 Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose n Absolute maximum ratings (Ta=25C) n Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 4.2 10.1 c 0.5 2.8 VCBO 80 ICBO VCB=80V 10max V m A VCEO 50 V IEBO VEB=6V 10max m A VEBO 6 V(BR)CEO IC=25mA 50min V V 3.30.2 a hFE 500min IC 3 A VCE=4V, IC=0.5A b IB 1 VCE(sat) IC=1A, IB=20mA 0.5max V A PC fT VCE=12V, IE=0.1A 40typ 25(Tc=25C) W MHz 0.15 Tj 150 COB VCB=10V,f=1MHz 30typ pF 1.35 C 1.350.15 Tstg 55 to +150 C +0.2 0.85 -0.1 +0.2 0.45 -0.1 0.2 2.4 2.54 2.54 n Typical Switching Characteristics (Common Emitter) 0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) () (A) (V) (V) (mA) (mA) (m s) (m s) (m s) a. Part No. BEC 20 10 5 15 b. Lot No. 20 1 30 0.45typ 1.60typ 0.85typ I C VCE Characteristics (Typical) VCE(sat) IB Characteristics (Typical) I C VBE Temperature Characteristics (Typical) (VCE=4V) 3 1.5 3 2.5 2 2 1 1.5 1 0.5 1 0.5 0 0 0 0 1 2 3 456 1 10 100 1000 0 0.5 1 1.5 Collector-Emitter Voltage VCE(V) Base Current I B(mA) Base-Emittor Voltage VBE(V) hFEIC Characteristics (Typical) hFEIC Temperature Characteristics (Typical) j-at Characteristics (VCE=4V) (VCE=4V) 3000 5000 7 5 1000 1000 500 500 100 50 100 20 1 1 10 100 1000 2000 0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 Collector Current I C(A) Collector Current I C(A) Time t(ms) Safe Operating Area (Single Pulse) f T IE Characteristics (Typical) Pc Ta Derating (VCE=12V) 30 60 10 Natural Cooling Silicone Grease 5 Heatsink: Aluminum in mm 40 20 1 0.5 100x 20 10 Without Heatsink Natural Cooling 0.1 Without Heatsink 2 0 0.05 0 0.005 0.01 0.1 1 3 5 50 100 10 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(C) Emitter Current I E(A) 110 I C=1A 125C Typ 25C 55C Typ 150x150x2 50x50x2 3A 2A 2mA 1mA I B=0.5mA 3mA 5mA 8mA 12mA 18mA 30mA 125C (Case Temp) 25C (Case Temp) 55C (Case Temp) DC Current Gain hFE Cut-off Frequency f T(MH Z) Collector Current I C(A) DC Current Gain hFE Collector Current I C(A) Collector-Emitter Saturation Voltage VCE(sat)(V) Transient Thermal Resistance j-a(C/W) Maximum Power Dissipation P C(W) Collector Current I C(A) 0.3 13.0min 16.9 8.40.2 3.9 0.80.2 0.2 4.00.2