2N2920 2N2920A www.centralsemi.com SILICON DESCRIPTION: DUAL NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 30 mA C Power Dissipation (One Die) P 300 mW D Power Dissipation (Both Dice) P 500 mW D Power Dissipation (One Die, T=25C) P 750 mW C D Power Dissipation (Both Dice, T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=45V 2.0 nA CBO CB I V=5.0V 2.0 nA CEO CE I V=5.0V 2.0 nA EBO EB BV I=10A 60 V CBO C BV I=10mA 60 V CEO C BV I=10A 6.0 V EBO E V I =1.0mA, I=100A 0.35 V CE(SAT) C B V V =5.0V, I=100A 0.70 V BE(ON) CE C h V =5.0V, I=10A 150 600 FE CE C h V =5.0V, I =10A, T=-55C 40 FE CE C A h V =5.0V, I=100A 225 FE CE C h V =5.0V, I=1.0mA 300 FE CE C f V =5.0V, I =500A, f=20MHz 60 MHz T CE C C V =5.0V, I =0, f=140kHz 6.0 pF ob CB E NF V =5.0V, I =10A, R=10k, CE C S f=1.0kHz, BW=200Hz 3.0 dB R1 (4-April 2014)2N2920 2N2920A SILICON DUAL NPN TRANSISTORS MATCHING CHARACTERISTICS: (T =25C unless otherwise noted) A 2N2920 2N2920A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS h /h * V =5.0V, I=100A 0.9 1.0 0.9 1.0 FE1 FE2 CE C V -V V =5.0V, I=10A - 5.0 - 2.0 mV BE1 BE2 CE C V -V V =5.0V, I=100A - 3.0 - 1.5 mV BE1 BE2 CE C (V -V ) V =5.0V, I =100A, T =-55C to +25C - 0.8 - - mV BE1 BE2 CE C A (V -V ) V =5.0V, I =100A, T =+25C to +125C - 1.0 - - mV BE1 BE2 CE C A *The lowest reading is taken as h . FE1 TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (4-April 2014) www.centralsemi.com