STD7N65 STMicroelectronics

Name: STD7N65
Brand: STMicroelectronics
SKU: STD7N65_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STD7N65 electronic component of STMicroelectronics

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STD7N65 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD7N65 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.

STD7N65

Manufacturer:

STMicroelectronics

Category:

MOSFETs

Description:

MOSFET N Trench 650V 5A (Tc) 4V @ 250uA 1.15 Î© @ 2.5A,10V TO-252-2 (DPAK) RoHS

Datasheet:

Shipping Charges:

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Price (USD)

1: USD 1.3558 ea
Line Total: USD 1.36

Availability : 0

Qty	Unit Price
1	$ 1.3558
10	$ 1.1558
30	$ 1.046
100	$ 0.9213
500	$ 0.7792
1000	$ 0.7555
2500	$ 0.7447
5000	$ 0.7384

STD7N65 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability0

Ship by Thu. 25 Jun to Wed. 01 Jul

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 1.3558
10	$ 1.1558
30	$ 1.046
100	$ 0.9213
500	$ 0.7792
1000	$ 0.7555
2500	$ 0.7447
5000	$ 0.7384

Specifications

Manufacturer STMicroelectronicsSTMicroelectronics
Product Category MOSFETsMOSFETs
Rohs yy
Package TO - 252 - 2 (DPAK)TO - 252 - 2 (DPAK)
Brand Category StmicroelectronicsStmicroelectronics
Fet Type n trenchn trench
Drain To Source Voltagevdss 650 V650 V
Continuous Drain Current Id @ 25°C 5 A (t C)5 A (t C)
Vgsth Max @ Id 4v @ 250ua4v @ 250ua
Rds On Max @ Id Vgs 1.15 @ 2.5a,10v1.15 @ 2.5a,10v
Power Dissipation Max 60 W60 W
Drain Source Voltage Vdss 650 V650 V
Continuous Drain Current Id 5 A5 A
Power Dissipation Pd 60 W60 W
Drain Source On Resistance Rdson@Vgs Id 1.15 Ohms @10V , 2.5A1.15 Ohms @10V , 2.5A
Gate Threshold Voltage Vgsth@Id 4 V @250uA4 V @250uA
Type N ChannelN Channel

We are delighted to provide the STD7N65 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD7N65 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The STD7N65 MOSFET N Trench 650V 5A (Tc) 4V @ 250uA 1.15 Î© @ 2.5A,10V TO-252-2 (DPAK) RoHS is a high voltage N-channel enhancement-mode insulated gate field effect transistor (MOSFET) manufactured by STMicroelectronics. It is specifically designed to withstand the high voltage of 650V and is able to operate with relatively low current drain. It has a drain/source voltage of 650V and a drain current of 5A (Tc). The device also has a maximum gate threshold voltage of 4V at 250uA 1.15 O at 2.5A, 10V. The device is packaged in a TO-252-2 (DPAK) RoHS package, making it very easy to use in a variety of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Maxmay also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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