STTH312 Ultrafast recovery - 1200 V diode Datasheet - production data Description . The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic . ruggedness. These characteristics make it ideal . for heavy duty applications that demand long term reliability. 1& Such demanding applications include industrial 1& power supplies, motor control, and similar mission-critical systems that require rectification . 3 and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. Features The improved performance in low leakage current, and therefore thermal runaway guard Ultrafast, soft recovery band, is an immediate competitive advantage for Very low conduction and switching losses this device. High frequency and/or high pulsed current Table 1. Device summary operation High reverse voltage capability Symbol Value High junction temperature I 3 A F(AV) ECOPACK 2 compliant component for DPAK V 1200 V RRM on demand T (max) 175 C j V (typ) 1.15 V F t (typ) 55 ns rr April 2015 DocID12153 Rev 2 1/9 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Characteristics STTH312 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I RMS forward current 6 A F(RMS) I Average forward current, = 0.5, square wave T = 150 C 3 A F(AV) c t = 10 ms sinusoidal I Surge non repetitive forward current 35 A p FSM T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 3.8 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 10 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 2 100 j T = 25 C 2 j (2) V Forward voltage drop T = 125 C I = 3A 1.20 1.70 V F j F T = 150 C 1.15 1.65 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.4 x I + 0.1 I F(AV) F (RMS) 2/9 DocID12153 Rev 2 Obsolete Product(s) - Obsolete Product(s)