X-On Electronics has gained recognition as a prominent supplier of 2N2907A BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2907A BIPOLAR TRANSISTORS - BJT are a product manufactured by Taitron. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

2N2907A Taitron

2N2907A electronic component of Taitron
Images are for reference only
See Product Specifications
Part No.2N2907A
Manufacturer: Taitron
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.6A 3-Pin TO-18
Datasheet: 2N2907A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 8.1081 ea
Line Total: USD 16.22

Availability - 1
Ships to you between
Mon. 24 Jun to Fri. 28 Jun
MOQ: 2  Multiples: 20
Pack Size: 20
Availability Price Quantity
1 - WHS 1


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 2
Multiples : 20
2 : USD 7.7962
20 : USD 7.0875
25 : USD 5.9325
50 : USD 3.1238
100 : USD 2.0344
250 : USD 0.8728
500 : USD 0.798
1000 : USD 0.6484

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the 2N2907A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2907A and other electronic components in the Bipolar Transistors - BJT category and beyond.

2N2906 2N2906A 2N2907 2N2907A www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE 2N2906 2N2906A MAXIMUM RATINGS: (T =25C) SYMBOL 2N2907 2N2907A UNITS A Collector-Base Voltage V 60 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 400 mW D Power Dissipation (T=25C) P 1.8 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 438 C/W JA Thermal Resistance 97 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N2906 2N2906A 2N2907 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 20 - 10 nA CBO CB I V =50V, T=150C - 20 - 10 A CBO CB A I V =30V, V=0.5V - 50 - 50 nA CEV CE EB BV I=10A 60 - 60 - V CBO C BV I=10mA 40 - 60 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.4 V CE(SAT) C B V I =500mA, I=50mA - 1.6 - 1.6 V CE(SAT) C B V I =150mA, I=15mA - 1.3 - 1.3 V BE(SAT) C B V I =500mA, I=50mA - 2.6 - 2.6 V BE(SAT) C B f V =20V, I =50mA, f=100MHz 200 - 200 - MHz T CE C C V =10V, I =0, f=1.0MHz - 8.0 - 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz - 30 - 30 pF ib EB C t V =30V, I =150mA, I=15mA - 45 - 45 ns on CC C B1 t V =6.0V, I =150mA, I =I =15mA - 100 - 100 ns off CC C B1 B2 R4 (30-January 2012)2N2906 2N2906A 2N2907 2N2907A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C) 2N2906 2N2907 A 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX h V =10V, I =0.1mA (2N2906, 2N2907) 20 - 35 - FE CE C h V =10V, I =0.1mA (2N2906A, 2N2907A) 40 - 75 - FE CE C h V =10V, I =1.0mA (2N2906, 2N2907) 25 - 50 - FE CE C h V =10V, I =1.0mA (2N2906A, 2N2907A) 40 - 100 - FE CE C h V =10V, I =10mA (2N2906, 2N2907) 35 - 75 - FE CE C h V =10V, I =10mA (2N2906A, 2N2907A) 40 - 100 - FE CE C h V =10V, I =150mA 40 120 100 300 FE CE C h V =10V, I =500mA (2N2906, 2N2907) 20 - 30 - FE CE C h V =10V, I =500mA (2N2906A, 2N2907A) 40 - 50 - FE CE C TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R4 (30-January 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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