TJ60S06M3L,LXHQ Toshiba

TJ60S06M3L,LXHQ electronic component of Toshiba
TJ60S06M3L,LXHQ Toshiba
TJ60S06M3L,LXHQ MOSFETs
TJ60S06M3L,LXHQ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TJ60S06M3L,LXHQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TJ60S06M3L,LXHQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TJ60S06M3L,LXHQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET 100W 1MHz Automotive; AEC-Q101
Datasheet: TJ60S06M3L,LXHQ Datasheet (PDF)
Price (USD)
1: USD 3.5804 ea
Line Total: USD 3.58 
Availability - 28
  
Ship by Tue. 05 Aug to Fri. 08 Aug
QtyUnit Price
1$ 3.5804
10$ 2.2743
30$ 1.8145
100$ 1.5784
500$ 1.4705
1000$ 1.4241

Availability 28
Ship by Tue. 05 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.5804
10$ 2.2743
30$ 1.8145
100$ 1.5784
500$ 1.4705
1000$ 1.4241

   
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We are delighted to provide the TJ60S06M3L,LXHQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TJ60S06M3L,LXHQ and other electronic components in the MOSFETs category and beyond.

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TJ60S06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S06M3LTJ60S06M3LTJ60S06M3LTJ60S06M3L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 8.6 m (typ.) (V = -10 V) DS(ON) GS (3) Low leakage current: I = -10 A (max) (V = -60 V) DSS DS (4) Enhancement mode: V = -2.0 to -3.0 V (V = -10 V, I = -1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2011-03 2016-2020 2020-07-06 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TJ60S06M3L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -60 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -60 A D Drain current (pulsed) (Note 1) I -120 DP Power dissipation (T = 25) P 100 W c D Single-pulse avalanche energy (Note 2) E 132 mJ AS Avalanche current I -60 A AR Channel temperature (Note 3) T 175 ch Storage temperature (Note 3) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 1.5 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = -25 V, T = 25 (initial), L = 50 H, R = 25 , I = -60 A DD ch G AR Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2020 2020-07-06 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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