TK190U65Z MOSFETs Silicon N-Channel MOS (DTMOS) TK190U65Z 1. Applications Switching Power Supplies 2. Features (1) Low drain-source on-resistance: R = 0.149 (typ.) DS(ON) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: V = 3 to 4 V (V = 10 V, I = 0.61 mA) th DS D 3. Packaging and Internal Circuit 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. TOLL 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 15 A D Drain current (pulsed) (Note 1) I 60 DP Power dissipation (T = 25 ) P 130 W c D Single-pulse avalanche energy (Note 2) E 165 mJ AS Single-pulse avalanche current I 3.7 A AS Reverse drain current (DC) (Note 1) I 15 DR Reverse drain current (pulsed) (Note 1) I 60 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2020-12 2020 2020-10-23 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0TK190U65Z 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.961 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 21.4 mH, I = 3.7 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2020 2020-10-23 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0