TKR74F04PB,LXGQ Toshiba

TKR74F04PB,LXGQ electronic component of Toshiba
TKR74F04PB,LXGQ Toshiba
TKR74F04PB,LXGQ MOSFETs
TKR74F04PB,LXGQ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TKR74F04PB,LXGQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TKR74F04PB,LXGQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TKR74F04PB,LXGQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET PD=375W F=1MHZ AEC-Q101
Datasheet: TKR74F04PB,LXGQ Datasheet (PDF)
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.7639
10$ 4.4221
25$ 4.1839
100$ 3.6246
500$ 3.0861
1000$ 2.5994
2000$ 2.4441
5000$ 2.3612
N/A

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Hts Code
LoadingGif
 
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We are delighted to provide the TKR74F04PB,LXGQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TKR74F04PB,LXGQ and other electronic components in the MOSFETs category and beyond.

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TKR74F04PB MOSFETs Silicon N-channel MOS (U-MOS-H) TKR74F04PBTKR74F04PBTKR74F04PBTKR74F04PB 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 0.6 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 40 V) DSS DS (4) Enhancement mode: V = 2.0 to 3.0 V (V = 10 V, I = 1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) Start of commercial production 2015-10 2016-2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.9.0TKR74F04PB 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 40 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 250 A D Drain current (pulsed) (Note 1) I 750 DP Power dissipation (T = 25 ) (Note 2) P 375 W c D Single-pulse avalanche energy (Note 3) E 731 mJ AS Single-pulse avalanche current I 250 A AS Channel temperature (Note 4) T 175 ch Storage temperature (Note 4) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2016-2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.9.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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