TPH2R408QM MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R408QM 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: Q = 28 nC (typ.) SW (3) Small output charge: Q = 90 nC (typ.) oss (4) Low drain-source on-resistance: R = 1.9 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 80 V) DSS DS (6) Enhancement mode: V = 2.5 to 3.5 V (V = 10 V, I = 1.0 mA) th DS D 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative. Start of commercial production 2019-09 2019-2021 2021-06-03 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TPH2R408QM 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 80 V DSS Gate-source voltage V 20 GSS Drain current (DC) ( T = 25 ) (Note 1) I 120 A c D Drain current (DC) ( Silicon limit ) (Note 1), (Note 2) I 200 D Drain current (pulsed) ( t = 100 s ) (Note 1) I 500 DP Power dissipation ( T = 25 ) P 210 W c D Power dissipation (Note 3) P 3 D Power dissipation (Note 4) P 0.96 D Single-pulse avalanche energy (Note 5) E 144 mJ AS Single-pulse avalanche current (Note 5) I 120 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This product is not designed for radiation resistance or cosmic ray resistance, and these natural environmental factors may affect reliability. In addition, radiation from the constituent materials of the product also becomes a natural environmental factor, which may affect reliability. 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance ( T = 25 ) R 0.71 /W c th(ch-c) Channel-to-ambient thermal resistance ( T = 25 ) (Note 3) R 50 a th(ch-a) Channel-to-ambient thermal resistance ( T = 25 ) (Note 4) R 156 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 60 V, T = 25 (initial), L = 8.5 H, I = 120 A DD ch AS Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Board (a) Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2019-2021 2021-06-03 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0