Surface Mount PNP General Purpose Transistor 2N2907AUA (TX, TXV) Features: Ceramic 4 pin surface mount package Miniature package to minimize circuit board area Hermetically sealed Processed per MIL-PRF-19500/291 Description: The 2N2907AUA (TX, TXV) is a hermetically sealed ceramic surface mount general purpose switching transistor. The miniature four pin ceramic package is ideal for designs where board space and device weight are important design considerations. The UA suffix denotes the 4 terminal leadless chip carrier package, type A per MIL-PRF-19500/291. Typical screening per MIL-PRF-19500/291. The burn-in condition is V = 30 V. P = 400 mW, T = 25 C, t = 80 hrs. Refer to CB D A MIL-PRF-19500/291 for complete requirements. In addition, the TX and TXV versions receive 100% thermal response testing. When ordering parts without processing, do not use the TX or TXV suffix. Applications: General switching Amplification Signal processing Radio transmission Logic gates .022 .559 .006 .152 General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev C 02/2020 Page 1 TT electronics plc Form 500-1080-001 Rev - 06/2019 Surface Mount PNP General Purpose Transistor 2N2907AUA (TX, TXV) Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Collector-Base Voltage 60 V Collector-Emitter Voltage 60 V Emitter -Base Voltage 5.0 V Collector Current-Continuous 600 mA Operating Junction Temperature (T ) -65 C to +200 C J Storage Junction Temperature (T ) -65 C to +200 C stg Power Dissipation T = 25 C 0.5 W A (1) Power Dissipation Tc = 25 C 1.00 W Soldering Temperature (vapor phase reflow for 30 seconds) 215 C Soldering Temperature (heated collet for 5 seconds) 260 C Electrical Characteriscti s (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS OFF CHARACTERISTICS V Collector-Base Breakdown Voltage 60 V I = 10 A, I = 0 (BR)CBO C E (2) V Collector-Emitter Breakdown Voltage 60 V I = 10 mA, I = 0 (BR)CEO C B V Emitter -Base Breakdown Voltage 5.0 V I = 10 A, I = 0 (BR)EBO E C 10 A V = 50 V, I = 0 CB E I Collector-Base Cutoff Current CBO 10 A V = 50 V, I = 0, T = 150 C CB E A I Emitter -Base Cutoff Current 10 A V = 4.0 V, I = 0 EBO CE C I Collector Emitter Cutoff Current 50 nA V = 50 V CES EB ON CHARACTERISTICS 75 - V = 10 V, I = 0.1 mA CE C 100 450 - V = 10 V, I = 1.0 mA CE C 100 - V = 10 V, I = 10 mA CE C h Forward-Current Transfer Ratio FE (2) 100 300 - V = 10 V, I = 150 mA CE C (2) 50 - V = 10 V, I = 500 mA CE C 50 - V = 10 V, I = 1.0 mA, T = -55 C CE C A Note: 1. Derate linearly 6.6 mW/C above 25 C 2. Pulse Width 300 s, Duty Cycle 2.0% General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev C 02/2020 Page 2 TT electronics plc Form 500-1080-001 Rev - 06/2019