Surface Mount NPN/PNP Complementary Transistor 2N4854U (TX, TXV) Features: Ceramic 6 pin surface mount package Small package to minimize circuit board area Hermetically sealed Processed per MIL-PRF-19500/421 Description: The 2N4854U (TX, TXV) are hermetically sealed, ceramic surface mount complementary NPN/PNP transistor pair. The U suffix denotes the six terminal (C -6) leadless chip carrier package option. The miniature six pin ceramic package is ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are per MIL-PRF-19500/421. The burn-in condition is V = 30 V, P = 300 mW CB D each transistor, T = 25C. Refer to MIL-PRF-19500/421 for complete requirements. A When ordering parts without processing, do not us the TX or TXV suffix. Applications: General switching Amplification Signal processing Radio transmission Logic gates 5 6 3 2 Pin PNP Pin NPN Transistor 3 Base 2 Base 4 Collector 1 Collector 5 Emitter 6 Emitter General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 2900 E. Plano Pkwy, Plano, TX 75074 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev D 01/2020 Page 1 TT electronics plc Surface Mount NPN/PNP Complementary Transistor 2N4854U (TX, TXV) Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A NPN to PNP Isolation Voltage 500 VDC Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter -Base Voltage 5.0 V Collector Current-Continuous 600 mA Operating Junction Temperature (T ) -65 C to +200 C J Storage Junction Temperature (T ) -65 C to +200 C stg Power Dissipation T = 25C (both transistors driven equally) 0.6 W A (1) Power Dissipation Tc = 25 C (both transistors driven equally) 2.0 W Soldering Temperature (vapor phase reflow for 30 seconds) 215 C Soldering Temperature (heated collet for 5 seconds) 260 C Electrical Characteriscti s (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS OFF CHARACTERISTICS V Collector-Base Breakdown Voltage 60 V I = 10 A, I = 0 (BR)CBO C E (2) V Collector-Emitter Breakdown Voltage 40 V I = 10 mA, I = 0 (BR)CEO C B V Emitter -Base Breakdown Voltage 5 V I = 10 A, I = 0 (BR)EBO E C 10 nA V = 50 V, I = 0 CB E I Collector-Base Cutoff Current CBO 10 A V = 50 V, I = 0, T = 150 C CB E A I Emitter -Base Cutoff Current 10 nA V = 3 V, I = 0 EBO EB C ON CHARACTERISTICS (2) 50 - V = 10 V, I = 150 mA CE C 35 - V = 10 V, I = 0.1 mA CE C 50 - V = 10 V, I = 1.0 mA CE C (2) h Forward-Current Transfer Ratio 75 - V = 10 V, I = 10 mA FE CE C (2) 100 300 - V = 10 V, I = 150 mA CE C (2) 35 - V = 10 V, I = 300 mA CE C 12 - V = 10 V, I = 10 mA, T = -55C CE C A Note: 1. Derate linearly 6.6 mW/C above 25 C 3. Polariesti given are for the NPN device. Reverse polarity on limits & condioti ns 2. Pulse Width 300 s, Duty Cycle 2.0% as applicable for the PNP side. General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 2900 E. Plano Pkwy, Plano, TX 75074 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev D 01/2020 Page 2 TT electronics plc