SILICON EPITAXIAL PNP TRANSISTOR 2N4906 Low Collector Saturation Voltage. Hermetic TO3 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) C V Collector Base Voltage -80V CBO V Collector Emitter Voltage -80V CEO V Emitter Base Voltage -5V EBO I Continuous Collector Current -5A C I Base Current -1.0A B P T = 25C Total Power Dissipation at 87.5W D C Derate Above 25C 0.5W/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units R Thermal Resistance, Junction To Case 2 C/W JC Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8299 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: SILICON EPITAXIAL PNP TRANSISTOR 2N4906 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) C Symbols Parameters Test Conditions Min. Typ Max. Units (1) Collector-Emitter V I = -10mA -80 V (BR)CEO C Breakdown Voltage V = -80V V = 1.5V -0.1 CE BE I Collector Cut-Off Current CEV T = 150C -2 C I V = -80V I = 0 Collector Cut-Off Current -1.0 mA CEO CE B I V = -80V I = 0 Collector Cut-Off Current -0.1 CBO CB E I V = -5V I = 0 Emitter Cut-Off Current -1.0 EBO EB C I = -2.5A V = -2V 25 100 C CE (1) Forward-current transfer h FE ratio I = -5A V = -2V 7 C CE (1) V I = -2.5A V = -2V Base-Emitter Voltage -1.4 BE(on) C CE I = -2.5A I = -0.25A -1.0 V C B (1) Collector-Emitter Saturation V CE(sat) Voltage I = -5A I = -1.0A -1.5 C B DYNAMIC CHARACTERISTICS I = -500mA V = -10V C CE h Small-Signal Current Gain 40 fe f = 1.0KHz I = -1.0A V = -10V C CE f Transition Frequency 4 MHz T f = 1.0MHz NNNNooootttteeeessss (1) Pulse Width 300us, 2% SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8299 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: