Product Information

1N60L-TN3-R

1N60L-TN3-R electronic component of Unisonic

Datasheet
MOSFET N Trench 600V 1.2A (Tc) 4V @ 250uA 11.5 Ω @ 600mA,10V TO-252-2 (DPAK) RoHS

Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1778 ea
Line Total: USD 0.89

2046 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1634 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 5
Multiples : 5

Stock Image

1N60L-TN3-R
Unisonic

5 : USD 0.2219
50 : USD 0.1763
150 : USD 0.1569
500 : USD 0.1324
2500 : USD 0.1217
5000 : USD 0.1152

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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TechnologiesThe 1N60L-TN3-R is a metal oxide semiconductor field-effect transistor (MOSFET) from Unisonic Technologies. It has a trench N type MOSFET with a low gate threshold voltage of 4V at 250uA. This MOSFET is rated at 600V with a current rating of 1.2A and a maximum power dissipation of 2.88 watts. The device comes in a TO-252-2 (DPAK) RoHS package and has a low on-resistance of 11.5O at 600mA. It is designed to have fast switching times and low input and output capacitance. This device is suitable for applications in power switching/converters, DC/DC converters, and motor controls.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Unisonic Tech
UTC(Unisonic Tech)

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