2SA2016G-AB3-R Unisonic

Name: 2SA2016G-AB3-R
Brand: Unisonic
SKU: 2SA2016GAB3R_Unisonic
Availability: InStock
Rating: 5 (11 reviews)

2SA2016G-AB3-R electronic component of Unisonic

2SA2016G-AB3-R Bipolar Transistors - BJT

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SA2016G-AB3-R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2016G-AB3-R Bipolar Transistors - BJT are a product manufactured by Unisonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	2SA2016G-AB3-R
Manufacturer:	Unisonic
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 7A 50V SOT-89 (SOT-89-3) RoHS
Datasheet:	2SA2016G-AB3-R Datasheet (PDF)

Price (USD)

1: USD 0.227 ea
Line Total: USD 0.23

Availability : 6098

Ship by Fri. 14 Nov to Thu. 20 Nov

Qty Unit Price
1 $ 0.227
10 $ 0.1784
30 $ 0.1544
100 $ 0.1362
500 $ 0.0821
1000 $ 0.0772

2SA2016G-AB3-R More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 6098

Ship by Fri. 14 Nov to Thu. 20 Nov

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 0.227
10 $ 0.1784
30 $ 0.1544
100 $ 0.1362
500 $ 0.0821
1000 $ 0.0772

Specifications

Manufacturer

Unisonic Unisonic

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 89 (SOT - 89 - 3) SOT - 89 (SOT - 89 - 3)

Brand Category

Unisonic Unisonic

Transistor Type

pnp pnp

Current - Collector Ic Max

7 A 7 A

Voltage - Collector Emitter Breakdown Max

50 V 50 V

Power - Max

3.5 W 3.5 W

Collector Cut-Off Current Icbo

100 nA 100 nA

Collector-Emitter Breakdown Voltage Vceo

50 V 50 V

Power Dissipation Pd

3.5 W 3.5 W

Collector Current Ic

7 A 7 A

Dc Current Gain Hfe@Ic Vce

200@500 mA , 2V 200@500 mA , 2V

Transition Frequency Ft

290MHz 290MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

240 mV @2A , 40 mA 240 mV @2A , 40 mA

Operating Temperature

+ 150 C @ (Tj) + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

2SA2016G-AB3-R Alternative Parts

We are delighted to provide the 2SA2016G-AB3-R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2016G-AB3-R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The 2SA2016G-AB3-R is a SOT-89-3 PNP Transistor manufactured by Unisonic Technologies. It is RoHS compliant and has a maximum collector current rating of 7A at a maximum collector-emitter voltage of 50V. It is a 3-pin SOT-89 package, suitable for applications in low noise and linear amplification circuits.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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Qty	Unit Price
1	$ 0.227
10	$ 0.1784
30	$ 0.1544
100	$ 0.1362
500	$ 0.0821
1000	$ 0.0772

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