UF4C120070K3S UnitedSiC

Name: UF4C120070K3S
Brand: UnitedSiC
SKU: UF4C120070K3S_UnitedSiC
Availability: OutOfStock
Rating: 5 (11 reviews)

UF4C120070K3S electronic component of UnitedSiC

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X-On Electronics has gained recognition as a prominent supplier of UF4C120070K3S MOSFETs across the USA, India, Europe, Australia, and various other global locations. UF4C120070K3S MOSFETs are a product manufactured by UnitedSiC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	UF4C120070K3S
Manufacturer:	UnitedSiC
Category:	MOSFETs
Description:	MOSFET 1200V/70mOhm, SiC, FAST CASCODE, G4, TO-247-3L, REDUCED Rth
Datasheet:

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UF4C120070K3S More Buying Options & Price Grid(s)

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Price (USD)

Quantity

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 16.7958
10	$ 15.435
120	$ 12.5273
510	$ 11.1825
1020	$ 10.8191

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We are delighted to provide the UF4C120070K3S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UF4C120070K3S and other electronic components in the MOSFETs category and beyond.

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HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer UnitedSiC UnitedSiC
Product Category MOSFETs MOSFETs
Id - Continuous Drain Current 27.5 A 27.5 A
Vds - Drain-Source Breakdown Voltage 1.2 kV 1.2 kV
Rds On - Drain-Source Resistance 91 mOhms 91 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 6 V 6 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 217 W 217 W
Mounting Style Through Hole Through Hole
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology SiC SiC
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage - 20 V , + 20 V - 20 V , + 20 V
Qg - Gate Charge 37.8 nC 37.8 nC
Channel Mode Depletion Depletion
Hts Code 8541290095 8541290095