QM3114M3 uPI Semiconductor

QM3114M3 electronic component of uPI Semiconductor
QM3114M3 uPI Semiconductor
QM3114M3 MOSFETs
QM3114M3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QM3114M3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. QM3114M3 MOSFETs are a product manufactured by uPI Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. QM3114M3
Manufacturer: uPI Semiconductor
Category: MOSFETs
Description: MOSFET PRPAK3*3 RoHS
Datasheet:
Price (USD)
1: USD 0.5867 ea
Line Total: USD 0.59 
Availability : 0
  
QtyUnit Price
1$ 0.5867
10$ 0.4455
30$ 0.4212
100$ 0.3944
500$ 0.3823
1000$ 0.3774

Availability 0
Ship by Mon. 11 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5867
10$ 0.4455
30$ 0.4212
100$ 0.3944
500$ 0.3823
1000$ 0.3774

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QM3114M3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QM3114M3 and other electronic components in the MOSFETs category and beyond.

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The QM3114M3 with MOSFET PRPAK3*3 RoHS manufactured by uPI Semiconductor is a Protection and Level Shifter (PLS) device integrated with three (3) N-Channel MOSFETs with a Silicon Nitride Passivation Layer. These MOSFETs have a threshold voltage of 5V, ensuring a low VF threshold that enables the device to effectively protect +5V CMOS Loads from 0.2V to 5V input voltages.The device is designed for low breakdown voltage (BVDSS) applications and is suitable for providing protection against ESD strikes of 2KV HBM (Human Body Model). It also features an adjustable timing synchronized with a TTL signal, which enables variable shielding time control in order to reduce overshoot or ringing in the output. Additionally, its RoHS compliance ensures safe and environment friendly usage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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