WMN38N65FD Wayon

WMN38N65FD electronic component of Wayon
WMN38N65FD Wayon
WMN38N65FD MOSFETs
WMN38N65FD  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of WMN38N65FD MOSFETs across the USA, India, Europe, Australia, and various other global locations. WMN38N65FD MOSFETs are a product manufactured by Wayon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. WMN38N65FD
Manufacturer: Wayon
Category: MOSFETs
Description: Transistor: N-MOSFET; SJ-MOSFET FD; unipolar; 650V; 38A; 277W
Datasheet:
Price (USD)
1: USD 4.9257 ea
Line Total: USD 4.93 
Availability : 0
  
QtyUnit Price
1$ 4.9257
5$ 3.2295
14$ 3.0531

Availability 0
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.9257
5$ 3.2295
14$ 3.0531

   
Manufacturer
Product Category
Technology
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Polarisation
Mounting
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Type Of Transistor
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On-State Resistance
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We are delighted to provide the WMN38N65FD from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WMN38N65FD and other electronic components in the MOSFETs category and beyond.

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The WMN38N65FD Transistor is a N-MOSFET, SJ-MOSFET FD, unipolar device manufactured by Wayon. It is rated for 650V, 38A and 277W, making it suitable for power supply design. Its unique design allows increased current carrying capacity and lower RDS(on). Additionally, its advanced-process technology enables superior thermal characteristics and improved switching speeds. This transistor is an ideal solution for high frequency switching, enabling noise-free and efficient operation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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