2N2218 2N2218A www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N2218 2N2218A UNITS Collector-Base Voltage V 60 75 V CBO Collector-Emitter Voltage V 30 40 V CEO Emitter-Base Voltage V 5.0 6.0 V EBO Continuous Collector Current I 800 mA C Power Dissipation P 800 mW D Power Dissipation (T=25C) P 3.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C) 2N2218 2N2218A A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 10 - - nA CBO CB I V=60V - - - 10 nA CBO CB I V =60V, V=3.0V - - - 10 nA CEV CE EB I V=3.0V - 10 - 10 nA EBO EB BV I=10A 60 - 75 - V CBO C BV I=10mA 30 - 40 - V CEO C BV I=10A 5.0 - 6.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.3 V CE(SAT) C B V I =500mA, I=50mA - 1.6 - 1.0 V CE(SAT) C B V I =150mA, I=15mA - 1.3 - 1.2 V BE(SAT) C B V I =500mA, I=50mA - 2.6 - 2.0 V BE(SAT) C B h V =10V, I=100A 20 - 20 - FE CE C h V =10V, I=1.0mA 25 - 25 - FE CE C h V =10V, I=10mA 35 - 35 - FE CE C h V =10V, I=150mA 40 120 40 120 FE CE C h V =1.0V, I=150mA 20 - 20 - FE CE C h V =10V, I=500mA 20 - - - FE CE C h V =10V, I=500mA - - 25 - FE CE C R1 (31-July 2013)2N2218 2N2218A SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C) 2N2218 2N2218A A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =20V, I=20mA 250 - 250 - MHz T CE C C V=10V, f=100kHz - 8.0 - 8.0 pF ob CB t V =30V, I =150mA, I=15mA - 35 - 35 ns on CC C B t V =30V, I =150mA, I =I=15mA - 285 - 285 ns off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (31-July 2013) www.centralsemi.com