X-On Electronics has gained recognition as a prominent supplier of 2N2369A/B BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2369A/B BIPOLAR TRANSISTORS - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

2N2369A/B Central Semiconductor

2N2369A/B electronic component of Central Semiconductor
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See Product Specifications
Part No.2N2369A/B
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: 2N2369A/B LTB 30/06/098 B T/HOLE
Datasheet: 2N2369A/B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8666 ea
Line Total: USD 0.87

Availability - 0
Ships to you by
Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you by Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8666
100 : USD 0.4333
250 : USD 0.3899
500 : USD 0.325
1000 : USD 0.2925

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the 2N2369A/B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2369A/B and other electronic components in the Bipolar Transistors - BJT category and beyond.

2N2369A www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTOR The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CES Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 4.5 V EBO Continuous Collector Current I 200 mA C Peak Collector Current I 500 mA CM Power Dissipation P 360 mW D Power Dissipation (T=25C) P 1.2 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 486 C/W JA Thermal Resistance 146 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=20V 400 nA CBO CB I V =20V, T=150C 30 A CBO CB A BV I=10A 40 V CBO C BV I=10A 40 V CES C BV I=10mA 15 V CEO C BV I=10A 4.5 V EBO E V I =10mA, I=1.0mA 200 mV CE(SAT) C B V I =10mA, I =1.0mA, T=125C 300 mV CE(SAT) C B A V I =30mA, I=3.0mA 250 mV CE(SAT) C B V I =100mA, I=10mA 500 mV CE(SAT) C B V I =10mA, I=1.0mA 700 850 mV BE(SAT) C B V I =30mA, I=3.0mA 1.15 V BE(SAT) C B V I =100mA, I=10mA 1.6 V BE(SAT) C B h V =1.0V, I=10mA 40 120 FE CE C h V =0.35V, I =10mA, T=55C 20 FE CE C A h V =0.4V, I=30mA 30 FE CE C h V =1.0V, I=100mA 20 FE CE C R1 (23-June 2014)2N2369A SILICON NPN TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =10V, I =10mA, f=100MHz 500 MHz T CE C C V =5.0V, I =0, f=140kHz 4.0 pF ob CB E t V =3.0V, I =10mA, I =3.0mA, I=1.5mA 12 ns on CC C B1 B2 t V =3.0V, I =10mA, I =3.0mA, I=1.5mA 18 ns off CC C B1 B2 t V =10V, I =10mA, I =I=10mA 13 ns s CC C B1 B2 TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (23-June 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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