2N4904 2N4905 2N4906 PNP
2N4913 2N4914 2N4915 NPN
www.centralsemi.com
COMPLEMENTARY SILICON
DESCRIPTION:
POWER TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N4904, 2N4913
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
2N4904 2N4905 2N4906
MAXIMUM RATINGS: (T =25C) SYMBOL 2N4913 2N4914 2N4915 UNITS
C
Collector-Base Voltage V 40 60 80 V
CBO
Collector-Emitter Voltage V 40 60 80 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 5.0 A
C
Continuous Base Current I 1.0 A
B
Power Dissipation P 87.5 W
D
Operating and Storage Junction Temperature T , T -65 to +200 C
J stg
Thermal Resistance 2.0 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
C
PNP NPN
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I V =Rated V - 0.1 - 1.0 mA
CBO CB CBO
I V =Rated V - 1.0 - 1.0 mA
CEO CE CEO
I V =Rated V , V=1.5V - 0.1 - 1.0 mA
CEV CE CEO BE
I V =Rated V , V =1.5V, T=150C - 2.0 - 2.0 mA
CEV CE CEO BE C
I V=5.0V - 1.0 - 1.0 mA
EBO EB
BV I =200mA (2N4904, 2N4913) 40 - 40 - V
CEO C
BV I =200mA (2N4905, 2N4914) 60 - 60 - V
CEO C
BV I =200mA (2N4906, 2N4915) 80 - 80 - V
CEO C
V I =2.5A, I=250mA - 1.0 - 1.0 V
CE(SAT) C B
V I =5.0A, I=1.0A - 1.5 - 1.5 V
CE(SAT) C B
V V =2.0V, I=2.5A - 1.4 - 1.4 V
BE(ON) CE C
h V =2.0V, I=2.5A 25 100 25 100
FE CE C
h V =2.0V, I=5.0A 7.0 - 7.0 -
FE CE C
h V =10V, I =500mA, f=1.0kHz 40 - 20 -
fe CE C
f V =10V, I =1.0A, f=1.0MHz 4.0 - 4.0 - MHz
T CE C
R1 (7-March 2013)2N4904 2N4905 2N4906 PNP
2N4913 2N4914 2N4915 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R1 (7-March 2013)
www.centralsemi.com