2N5629 2N5630 NPN 2N6029 2N6030 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE 2N5629 2N5630 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6029 2N6030 UNITS C Collector-Base Voltage V 100 120 V CBO Collector-Emitter Voltage V 100 120 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 16 A C Peak Collector Current I 20 A CM Continuous Base Current I 5.0 A B Power Dissipation P 200 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 0.875 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 1.0 mA CBO CB CBO I V =Rated V , V=1.5V 1.0 mA CEX CE CEO EB I V =Rated V , V =1.5V, T=150C 5.0 mA CEX CE CEO EB C I V =Rated V 1.0 mA CEO CE CEO I V=7.0V 1.0 mA EBO EB BV I =200mA (2N5629, 2N6029) 100 V CEO C BV I =200mA (2N5630, 2N6030) 120 V CEO C V I =10A, I=1.0A 1.0 V CE(SAT) C B V I =16A, I=4.0A 2.0 V CE(SAT) C B V I =10A, I=1.0A 1.8 V BE(SAT) C B V V =2.0V, I=8.0A 1.5 V BE(ON) CE C h V =2.0V, I =8.0A (2N5629, 2N6029) 25 100 FE CE C h V =2.0V, I =8.0A (2N5630, 2N6030) 20 80 FE CE C h V =2.0V, I=16A 4.0 FE CE C h V =10V, I =4.0A, f=1.0kHz 15 fe CE C f V =20V, I =1.0A, f=500kHz 1.0 MHz T CE C C V =10V, I =0, f=100kHz (NPN) 500 pF ob CB E C V =10V, I =0, f=100kHz (PNP) 1.0 nF ob CB E R1 (19-March 2014)2N5629 2N5630 NPN 2N6029 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (19-March 2014) www.centralsemi.com