2N5961 2N5962 2N5963 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N5961 series NPN TRANSISTORS devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (h ) and FE low noise. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N5961 2N5962 2N5963 UNITS Collector-Base Voltage V 60 45 30 V CBO Collector-Emitter Voltage V 60 45 30 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 50 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N5961 2N5962 2N5963 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V =Rated V - 2.0 - 2.0 - 2.0 nA CBO CB CBO I V =Rated V , T=65C - 50 - 50 - 50 nA CBO CB CBO A I V =5.0V - 1.0 - 1.0 - 1.0 nA EBO EB BV I=10A 60 - 45 - 30 - V CBO C BV I=5.0mA 60 - 45 - 30 - V CEO C BV I=10A 7.0 - 7.0 - 7.0 - V EBO E V I =10mA, I=0.5mA, PW=300s - 0.2 - 0.2 - 0.2 V CE(SAT) C B V V =5.0V, I=1.0mA 0.5 0.7 0.5 0.7 0.5 0.7 V BE(ON) CE C h V =5.0V, I=10A 100 - 450 - 900 - FE CE C h V =5.0V, I=100A 120 - 500 - 1.0K - FE CE C h V =5.0V, I=1.0mA 135 - 550 - 1.2K - FE CE C h V =5.0V, I=10mA 150 700 600 1.4K 1.2K 2.2K FE CE C h V =5.0V, I =10mA, f=1.0kHz 150 1.0K 600 2.0K 1.2K 3.0K fe CE C f V =5.0V, I=10mA, f=100MHz 100 - 100 - 150 - MHz T CE C C V =5.0V, I=0 - 4.0 - 4.0 - 4.0 pF ob CB E C V =0.5V, I=0 - 6.0 - 6.0 - 6.0 pF ib EB C R1 (2-March 2016)2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A 2N5961 2N5962 2N5963 SYMBOL TEST CONDITIONS MAX MAX MAX UNITS NF V =5.0V, I =100A, R =1.0k, BW=400Hz, f=1.0kHz 6.0 6.0 6.0 dB CE C S NF V =5.0V, I =100A, R =10k, BW=400Hz, f=1.0kHz - 4.0 3.0 dB CE C S NF V =5.0V, I =100A, R =100k, BW=400Hz, f=1.0kHz - 8.0 6.0 dB CE C S NF V =5.0V, I =10A, R =10k, BW=400Hz, f=1.0kHz 3.0 3.0 3.0 dB CE C S NF V =5.0V, I =100A, R =1.0k, BW=10Hz, f=10Hz - - 8.0 dB CE C S NF* V =5.0V, I =10A, R=1.0k, BW=15.7kHz, CE C S f=10Hz to10kHz 3.0 3.0 3.0 dB * Wide Band Noise Figure TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (2-March 2016) www.centralsemi.com