2N6315 2N6316 NPN 2N6317 2N6318 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE 2N6315 2N6316 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6317 2N6318 UNITS C Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 7.0 A C Peak Collector Current I 15 A CM Continuous Base Current I 2.0 A B Power Dissipation P 90 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.95 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 0.25 mA CBO CB CBO I V =Rated V , V=1.5V 0.25 mA CEV CE CEO BE I V =Rated V , V =1.5V, T=150C 2.0 mA CEV CE CEO BE C I V =1/2 Rated V 0.50 mA CEO CE CEO I V=5.0V 1.0 mA EBO EB BV I =100mA, (2N6315, 2N6317) 60 V CEO C BV I =100mA, (2N6316, 2N6318) 80 V CEO C V I =4.0A, I=0.4A 1.0 V CE(SAT) C B V I =7.0A, I=1.75A 2.0 V CE(SAT) C B V I =7.0A, I=1.75A 2.5 V BE(SAT) C B V V =4.0V, I=2.5A 1.5 V BE(ON) CE C h V =4.0V, I=0.5A 35 FE CE C h V =4.0V, I=2.5A 20 100 FE CE C h V =4.0V, I=7.0A 4.0 FE CE C h V =4.0V, I =500mA, f=1.0kHz 20 fe CE C f V =10V, I =250mA, f=1.0MHz 4.0 MHz T CE C R3 (2-September 2014)2N6315 2N6316 NPN 2N6317 2N6318 PNP COMPLEMENTARY SILICON POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MAX UNITS C V =10V, I =0, f=1.0MHz, (2N6315, 2N6316) 200 pF ob CB E C V =10V, I =0, f=1.0MHz, (2N6317, 2N6318) 300 pF ob CB E t V =30V, I =2.5A I =I=0.25A 0.7 s r CC C B1 B2 t V =30V, I =2.5A I =I=0.25A 1.8 s off CC C B1 B2 TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R3 (2-September 2014) www.centralsemi.com