CDM22010-650
www.centralsemi.com
SILICON
N-CHANNEL POWER MOSFET
DESCRIPTION:
10 AMP, 650 VOLT
The CENTRAL SEMICONDUCTOR CDM22010-650
is a high current, 650 Volt N-Channel power MOSFET
designed for high voltage, fast switching applications
such as Power Factor Correction (PFC), lighting and
power inverters. This MOSFET combines high voltage
capability with low r , low threshold voltage and
DS(ON)
low gate charge.
MARKING CODE: CDM10-650
TO-220 CASE
APPLICATIONS: FEATURES:
Power Factor Correction
High voltage capability (V =650V)
DS
Motor drives
Low gate charge (Q =8.0nC)
gs
Alternative energy inverters
Low r (0.88)
DS(ON)
Solid state lighting
MAXIMUM RATINGS: (T =25C unless otherwise noted)
A
SYMBOL UNITS
Drain-Source Voltage V 650 V
DS
Gate-Source Voltage V 30 V
GS
Continuous Drain Current (Steady State) I 10 A
D
Maximum Pulsed Drain Current, tp=10s I 40 A
DM
Continuous Source Current (Body Diode) I 10 A
S
Maximum Pulsed Source Current (Body Diode) I 40 A
SM
Single Pulse Avalanche Energy (Note 1) E 608 mJ
AS
Power Dissipation P 2.0 W
D
Power Dissipation (T=25C) P 156 W
C D
Operating and Storage Junction Temperature T , T -55 to +150 C
J stg
Thermal Resistance 0.8 C/W
JC
Thermal Resistance 62.5 C/W
JA
Note 1: L=30mH, I =6.2A, V =50V, R =25, Initial T =25C
AS DD G J
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I , I V =30V, V=0 10 100 nA
GSSF GSSR GS DS
I V =650V, V=0 0.03 1.0 A
DSS DS GS
BV V =0, I=250A 650 V
DSS GS D
V V =V , I=250A 2.0 2.8 4.0 V
GS(th) GS DS D
V V =0, I=10A 0.9 1.4 V
SD GS S
r V =10V, I=5.0A 0.88 1.0
DS(ON) GS D
C V =25V, V =0, f=1.0MHz 1.2 pF
rss DS GS
C V =25V, V =0, f=1.0MHz 1168 pF
iss DS GS
C V =25V, V =0, f=1.0MHz 129 pF
oss DS GS
R1 (18-August 2014)CDM22010-650
SILICON
N-CHANNEL POWER MOSFET
10 AMP, 650 VOLT
ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS TYP UNITS
Q V =520V, V =10V, I =10A (Note 2) 20 nC
g(tot) DS GS D
Q V =520V, V =10V, I =10A (Note 2) 8.0 nC
gs DS GS D
Q V =520V, V =10V, I =10A (Note 2) 7.0 nC
gd DS GS D
t V =325V, I =10A, R =25 (Note 2) 20 ns
d DD D G
t V =325V, I =10A, R =25 (Note 2) 33 ns
r DD D G
t V =325V, I =10A, R =25 (Note 2) 57 ns
s DD D G
t V =325V, I =10A, R =25 (Note 2) 36 ns
f DD D G
t V =0, I =10A, di/dt=100A/s (Note 2) 570 ns
rr GS S
Q V =0, I =10A, di/dt=100A/s (Note 2) 4.7 C
rr GS S
Note 2: Pulse Width < 300s, Duty Cycle < 2%
TO-220 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
Tab) Drain
MARKING CODE: CDM10-650
R1 (18-August 2014)
www.centralsemi.com