CMBT3904E NPN CMBT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS (NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged in the FEMTOmini SOT-923 package, these transistors provide performance characteristics suitable for the most demanding size constrained applications. SOT-923 CASE MARKING CODES: CMBT3904E: B CMBT3906E: G FEATURES APPLICATIONS Very Small Package Size DC / DC Converters 200mA Collector Current Voltage Clamping Low V (0.1V Typ 50mA) Protection Circuits CE(SAT) Miniature 0.8 x 0.6 x 0.4mm Battery powered applications including: Ultra Low height profile Cell Phones, Digital Cameras, Pagers, FEMTOmini Surface Mount Package PDAs, Laptop Computers, etc. MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 100 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 1250 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS I V =30V, V=3.0V 50 nA CEV CE EB BV I =10A 60 115 90 V CBO C BV I=1.0mA 40 60 55 V CEO C BV I=10A 6.0 7.5 7.9 V EBO E V I =10mA, I=1.0mA 0.057 0.050 0.100 V CE(SAT) C B V I =50mA, I=5.0mA 0.100 0.100 0.200 V CE(SAT) C B V I =10mA, I =1.0mA 0.650 0.750 0.750 0.850 V BE(SAT) C B V I =50mA, I=5.0mA 0.850 0.850 0.950 V BE(SAT) C B Enhanced specification. R1 (8-January 2010)CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS h V =1.0V, I =0.1mA 90 240 130 FE CE C h V =1.0V, I =1.0mA 100 235 150 FE CE C h V =1.0V, I=10mA 100 215 150 300 FE CE C h V =1.0V, I=50mA 70 110 120 FE CE C h V =1.0V, I =100mA 30 50 55 FE CE C f V =20V, I =10mA, f=100MHz 300 MHz T CE C C V =5.0V, I =0, f=1.0MHz 4.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 8.0 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 1.0 12 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 0.1 10 X10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 60 S oe CE C NF V =5.0V, I =100A, R =1.0k, CE C S f=10Hz to 15.7kHz 4.0 dB t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns d CC BE C B1 t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA 200 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA 50 ns f CC C B1 B2 Enhanced specification. SOT-923 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: CMBT3904E: B CMBT3906E: G R1 (8-January 2010) www.centralsemi.com