CMKT2222A SURFACE MOUNT www.centralsemi.com DUAL NPN SMALL SIGNAL DESCRIPTION: SILICON SWITCHING The CENTRAL SEMICONDUCTOR CMKT2222A TRANSISTORS consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal general purpose and switching applications. MARKING CODE: K22 SOT-363 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 10 nA CBO CB I V =60V, T=125C 10 A CBO CB A I V =60V, V=3.0V 10 nA CEV CE EB I V=3.0V 10 nA EBO EB BV I=10A 75 V CBO C BV I=10mA 40 V CEO C BV I=10A 6.0 V EBO E V I =150mA, I=15mA 0.3 V CE(SAT) C B V I =500mA, I=50mA 1.0 V CE(SAT) C B V I =150mA, I=15mA 0.6 1.2 V BE(SAT) C B V I =500mA, I=50mA 2.0 V BE(SAT) C B h V =10V, I=0.1mA 35 FE CE C h V =10V, I=1.0mA 50 FE CE C h V =10V, I=10mA 75 FE CE C h V =1.0V, I=150mA 50 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =10V, I=500mA 40 FE CE C f V =20V, I =20mA, f=100MHz 300 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 25 pF ib EB C R4 (13-January 2010)CMKT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C) A SYMBOL TEST CONDITIONS MIN MAX UNITS h V =10V, I =1.0mA, f=1.0kHz 2.0 8.0 k ie CE C h V =10V, I =10mA, f=1.0kHz 0.25 1.25 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 8.0 x10 re CE C -4 h V =10V, I =10mA, f=1.0kHz 4.0 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 50 300 fe CE C h V =10V, I =10mA, f=1.0kHz 75 375 fe CE C h V =10V, I =1.0mA, f=1.0kHz 5.0 35 S oe CE C h V =10V, I =10mA, f=1.0kHz 25 200 S oe CE C rbC V =10V, I =20mA, f=31.8MHz 150 ps c CB E NF V =10V, I =100A, R =1.0k, f=1.0kHz 4.0 dB CE C S t V =30V, V =0.5V, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 25 ns r CC BE C B1 t V =30V, I =150mA, I =I=15mA 225 ns s CC C B1 B2 t V =30V, I =150mA, I =I=15mA 60 ns f CC C B1 B2 SOT-363 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: K22 R4 (13-January 2010) www.centralsemi.com