Product Information

CMPT2222A TR

CMPT2222A TR electronic component of Central Semiconductor

Datasheet
Transistors Bipolar - BJT NPN Gen Purpose

Manufacturer: Central Semiconductor
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Price (USD)

1: USD 0.7866 ea
Line Total: USD 0.7866

84378 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
83369 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

CMPT2222A TR
Central Semiconductor

1 : USD 0.7866
10 : USD 0.6923
100 : USD 0.491
500 : USD 0.4232
1000 : USD 0.3634
3000 : USD 0.3335
6000 : USD 0.3163
9000 : USD 0.3151
24000 : USD 0.3151

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CMPT2222A www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications. MARKING CODE: C1P SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 10 nA CBO CB I V =60V, T=125C 10 A CBO CB A I V =60V, V=3.0V 10 nA CEV CE EB I V=3.0V 10 nA EBO EB BV I=10A 75 V CBO C BV I=10mA 40 V CEO C BV I=10A 6.0 V EBO E V I =150mA, I=15mA 0.3 V CE(SAT) C B V I =500mA, I=50mA 1.0 V CE(SAT) C B V I =150mA, I=15mA 0.6 1.2 V BE(SAT) C B V I =500mA, I=50mA 2.0 V BE(SAT) C B h V =10V, I=0.1mA 35 FE CE C h V =10V, I=1.0mA 50 FE CE C h V =10V, I=10mA 75 FE CE C h V =1.0V, I =150mA 50 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =10V, I=500mA 40 FE CE C f V =20V, I =20mA, f=100MHz 300 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 25 pF ib BE C R5 (1-February 2010)CMPT2222A SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS h V =10V, I =1.0mA, f=1.0kHz 2.0 8.0 k ie CE C h V =10V, I =10mA, f=1.0kHz 0.25 1.25 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 8.0 X10 re CE C -4 h V =10V, I =10mA, f=1.0kHz 4.0 X10 re CE C h V =10V, I =1.0mA, f=1.0kHz 50 300 fe CE C h V =10V, I =10mA, f=1.0kHz 75 375 fe CE C h V =10V, I =1.0mA, f=1.0kHz 5.0 35 S oe CE C h V =10V, I =10mA, f=1.0kHz 25 200 S oe CE C rbC V =10V, I =20mA, f=31.8MHz 150 ps c CB E NF V =10V,I =100A, R =1.0K, f=1.0kHz 4.0 dB CE C S t V =30V, V =0.5V, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 25 ns r CC BE C B1 t V =30V, I =150mA, I =I=15mA 225 ns s CC C B1 B2 t V =30V, I =150mA, I =I=15mA 60 ns f CC C B1 B2 SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C1P R5 (1-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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