CMPT591E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. The CMPT591E features Low V , high h and has been CE(SAT) FE, designed for high current general purpose amplifier applications. MARKING CODE: C59 SOT-23 CASE COMPLEMENTARY TYPE: CMPT491E FEATURED ENHANCED SPECIFICATIONS: V 1.0A = 0.6V MAX (from 0.4V MAX) CE(SAT) h 500mA = 200 MIN (from 100 MIN) FE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 1.0 A C Continuous Base Current I 200 mA B Peak Collector Current I 2.0 A CM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 100 nA CBO CB I V=4.0V 100 nA EBO EB BV I=100A 80 V CBO C BV I=10mA 60 V CEO C BV I=100A 5.0 V EBO E V I =500mA, I=50mA 0.20 V CE(SAT) C B V I =1.0A, I=100mA 0.40 V CE(SAT) C B V I =1.0A, I=100mA 1.1 V BE(SAT) C B V V =5.0V, I=1.0A 1.0 V BE(ON) CE C h V =5.0V, I=1.0mA 200 FE CE C h V =5.0V, I=500mA 200 600 FE CE C h V =5.0V, I=1.0A 50 FE CE C h V =5.0V, I=2.0A 15 FE CE C f V =10V, I =50mA, f=100MHz 150 MHz T CE C C V =10V, I =0, f=1.0MHz 10 pF ob CB E Enhanced specification R3 (27-January 2010)CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C59 R3 (27-January 2010) www.centralsemi.com