Product Information

CMRDM7590 TR

CMRDM7590 TR electronic component of Central Semiconductor

Datasheet
MOSFET 20V P-Ch Enh FET 8.0Vgs 125mW 0.5mm

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7755 ea
Line Total: USD 0.78

2910 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
582 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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CMRDM7590 TR
Central Semiconductor

1 : USD 0.4509
10 : USD 0.388
100 : USD 0.2931
500 : USD 0.2326
1000 : USD 0.1886
2500 : USD 0.1732
8000 : USD 0.1578
24000 : USD 0.1554
48000 : USD 0.1519

     
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CMRDM7590 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMRDM7590 is SILICON MOSFET an enhancement-mode dual P-Channel MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers low r and low DS(ON) threshold voltage. MARKING CODE: CW FEATURES: SOT-963 CASE Power dissipation: 125mW Low package profile: 0.5mm (MAX) Device is Halogen Free by design APPLICATIONS: Low r DS(ON) Load/Power switches Low threshold voltage Power supply converter circuits Logic level compatibility Battery powered portable devices Small SOT-963 surface mount package MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current (Steady State) I 140 mA D Continuous Drain Current, t <5.0s I 180 mA p D Power Dissipation P 125 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 1000 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =5.0V, V=0 100 nA GSSF GSSR GS DS I V =5.0V, V=0 50 nA DSS DS GS I V =16V, V=0 100 nA DSS DS GS BV V =0, I=250A 20 V DSS GS D V V =V I=250A 0.4 1.0 V GS(th) DS GS, D r V =4.5V, I=100mA 4.0 5.0 DS(ON) GS D r V =2.5V, I=50mA 5.5 7.0 DS(ON) GS D r V =1.8V, I=20mA 8.0 10 DS(ON) GS D r V =1.5V, I=10mA 11 17 DS(ON) GS D r V =1.2V, I=1.0mA 20 DS(ON) GS D g V =5.0V, I=125mA 140 mS FS DS D C V =15V, V =0, f=1.0MHz 4.0 pF rss DS GS C V =15V, V =0, f=1.0MHz 10 pF iss DS GS C V =15V, V =0, f=1.0MHz 3.7 pF oss DS GS Q V =10V, V =4.5V, I=100mA 0.50 nC g(tot) DS GS D Q V =10V, V =4.5V, I=100mA 0.17 nC gs DS GS D Q V =10V, V =4.5V, I=100mA 0.11 nC gd DS GS D t V =10V, V =4.5V, I=200mA 35 ns on DD GS D t V =10V, V =4.5V, I=200mA 100 ns off DD GS D R3 (12-December 2012)CMRDM7590 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-963 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: CW R3 (12-December 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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