X-On Electronics has gained recognition as a prominent supplier of CMST2222A TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CMST2222A TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CMST2222A TR Central Semiconductor

CMST2222A TR electronic component of Central Semiconductor
CMST2222A TR Central Semiconductor
CMST2222A TR Bipolar Transistors - BJT
CMST2222A TR  Semiconductors

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See Product Specifications
Part No. CMST2222A TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Vcbo 5V Trans Vceo 40V 600mA 275mW
Datasheet: CMST2222A TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1218 ea
Line Total: USD 365.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1465
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.7188
10 : USD 0.4462
100 : USD 0.2679
500 : USD 0.2035
1000 : USD 0.1815
3000 : USD 0.1595
6000 : USD 0.1474
9000 : USD 0.1397

   
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We are delighted to provide the CMST2222A TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMST2222A TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CMST2222A www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications. MARKING CODE: 1PC SOT-323 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 275 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 455 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 10 nA CBO CB I V =60V, T=125C 10 A CBO CB A I V =60V, V=3.0V 10 nA CEV CE EB I V =3.0V 10 nA EBO EB BV I=10A 75 V CBO C BV I=10mA 40 V CEO C BV I=10A 6.0 V EBO E V I =150mA, I=15mA 0.3 V CE(SAT) C B V I =500mA, I=50mA 1.0 V CE(SAT) C B V I =150mA, I=15mA 0.6 1.2 V BE(SAT) C B V I =500mA, I=50mA 2.0 V BE(SAT) C B h V =10V, I=0.1mA 35 FE CE C h V =10V, I=1.0mA 50 FE CE C h V =10V, I=10mA 75 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =1.0V, I=150mA 50 FE CE C h V =10V, I=500mA 40 FE CE C f V =20V, I =20mA, f=100MHz 300 MHz T CE C R4 (9-February 2010)CMST2222A SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 25 pF ib EB C h V =10V, I =1.0mA, f=1.0kHz 2.0 8.0 k ie CE C h V =10V, I =10mA, f=1.0kHz 0.25 1.25 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 8.0 x10 re CE C -4 h V =10V, I =10mA, f=1.0kHz 4.0 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 50 300 fe CE C h V =10V, I =10mA, f=1.0kHz 75 375 fe CE C h V =10V, I =1.0mA, f=1.0kHz 5.0 35 S oe CE C h V =10V, I =10mA, f=1.0kHz 25 200 S oe CE C rbC V =10V, I =20mA, f=31.8MHz 150 ps c CB E NF V =10V, I =100mA, R =1.0k, f=1.0kHz 4.0 dB CE C S t V =30V, V =0.5, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5, I =150mA, I=15mA 25 ns r CC BE C B1 t V =30V, I =150mA, I =I=15mA 225 ns s CC C B1 B2 t V =30V, I =150mA, I =I=15mA 60 ns f CC C B1 B2 SOT-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 1PC R4 (9-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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