CXT5401
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
PNP SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CXT5401 type
is a PNP silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage amplifier
applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 160 V
CBO
Collector-Emitter Voltage V 150 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 600 mA
C
Power Dissipation P 1.2 W
D
Operating and Storage Junction Temperature T T -65 to +150 C
J, stg
Thermal Resistance 104 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V=120V 50 nA
CBO CB
I V =120V, T=100C 50 A
CBO CB A
I V=3.0V 50 nA
EBO EB
BV I=100A 160 V
CBO C
BV I=1.0mA 150 V
CEO C
BV I=10A 5.0 V
EBO E
V I =10mA, I=1.0mA 0.2 V
CE(SAT) C B
V I =50mA, I=5.0mA 0.5 V
CE(SAT) C B
V I =10mA, I=1.0mA 1.0 V
BE(SAT) C B
V I =50mA, I=5.0mA 1.0 V
BE(SAT) C B
h V =5.0V, I=1.0mA 50
FE CE C
h V =5.0V, I=10mA 60 240
FE CE C
h V =5.0V, I=50mA 50
FE CE C
f V =10V, I =10mA, f=100MHz 100 300 MHz
T CE C
C V =10V, I =0, f=1.0MHz 6.0 pF
ob CB E
h V =10V, I =1.0mA, f=1.0kHz 40 200
fe CE C
N V =5.0V, I =250A, R =1.0k,
F CE C S
f=10Hz to 15.7kHz 8.0 dB
R7 (23-February 2010)CXT5401
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R7 (23-February 2010)
www.centralsemi.com