CXT5551 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 160 V CEO Emitter-Base Voltage V 6.0 EBO V Continuous Collector Current I 600 C mA Power Dissipation P 1.2 W D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 104 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=120V 50 nA CBO CB I V =120V, T=100C 50 A CBO CB A I V=4.0V 50 nA EBO EB BV I=100A 180 V CBO C BV I=1.0mA 160 V CEO C BV I=10A 6.0 V EBO E V I =10mA, I=1.0mA 0.15 V CE(SAT) C B V I =50mA, I=5.0mA 0.20 V CE(SAT) C B V I =10mA, I=1.0mA 1.00 V BE(SAT) C B V I =50mA, I=5.0mA 1.00 V BE(SAT) C B h V =5.0V, I=1.0mA 80 FE CE C h V =5.0V, I=10mA 80 250 FE CE C h V =5.0V, I=50mA 30 FE CE C f V =10V, I =10mA, f=100MHz 100 300 MHz T CE C C V =10V, I =0, f=1.0MHz 6.0 pF ob CB E h V =10V, I =1.0mA, f=1.0kHz 50 200 fe CE C NF V =5.0V, I =200A, R =10, CE C S f=10Hz to 15.7kHz 8.0 dB R6 (23-February 2010)CXT5551 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R6 (23-February 2010) www.centralsemi.com