CZT3904 TR Central Semiconductor

CZT3904 TR electronic component of Central Semiconductor
CZT3904 TR Central Semiconductor
CZT3904 TR Bipolar Transistors - BJT
CZT3904 TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CZT3904 TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CZT3904 TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. CZT3904 TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 40V 200mA NPN GP
Datasheet: CZT3904 TR Datasheet (PDF)
Price (USD)
1: USD 1.6 ea
Line Total: USD 1.6 
Availability : 1594
  
Ship by Tue. 02 Sep to Thu. 04 Sep
QtyUnit Price
1$ 1.6
10$ 0.9708
100$ 0.6072
500$ 0.4983
1000$ 0.4576
2000$ 0.4092
5000$ 0.4015
10000$ 0.3927

Availability 1594
Ship by Tue. 02 Sep to Thu. 04 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6
10$ 0.9708
100$ 0.6072
500$ 0.4983
1000$ 0.4576
2000$ 0.4092
5000$ 0.4015
10000$ 0.3927

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CZT3904 TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CZT3904 TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CZT3904 NPN CZT3906 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CZT3904, SILICON TRANSISTORS CZT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER SOT-223 CASESOT-223 CASE MAXIMUM RATINGS: (T =25C) A SYMBOL CZT3904 CZT3906 UNITS Collector-Base Voltage V 60 40 V CBO Collector-Emitter Voltage V 40 40 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 2.0 W D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 62.5 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A CZT3904 CZT3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB BV I=10A 60 - 40 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 6.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.20 - 0.25 V CE(SAT) C B V I =50mA, I=5.0mA - 0.30 - 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 40 - 60 - FE CE C h V =1.0V, I=1.0mA 70 - 80 - FE CE C h V =1.0V, I=10mA 100 300 100 300 FE CE C h V =1.0V, I=50mA 60 - 60 - FE CE C h V =1.0V, I=100mA 30 - 30 - FE CE C f V =20V, I =10mA, f=100MHz 300 - 250 - MHz T CE C C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 8.0 - 10 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 1.0 10 2.0 12 k ie CE C R5 (1-March 2010)CZT3904 NPN CZT3906 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C) CZT3904 CZT3906 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS -4 h V =10V, I =1.0mA, f=1.0kHz 0.5 8.0 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 40 3.0 60 S oe CE C NF V =5.0V, I =100A, R =1.0k CE C S f=10Hz to 15.7kHz - 5.0 - 4.0 dB t V =3.0V, V =0.5V, I =10mA, I=1.0mA - 35 - 35 ns d CC BE C B1 t V =3.0V, V =0.5V, I =10mA, I=1.0mA - 35 - 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA - 200 - 225 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA - 50 - 75 ns f CC C B1 B2 SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R5 (1-March 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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