A2N7002HW-HF Comchip

A2N7002HW-HF electronic component of Comchip
A2N7002HW-HF Comchip
A2N7002HW-HF MOSFETs
A2N7002HW-HF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of A2N7002HW-HF MOSFETs across the USA, India, Europe, Australia, and various other global locations. A2N7002HW-HF MOSFETs are a product manufactured by Comchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. A2N7002HW-HF
Manufacturer: Comchip
Category: MOSFETs
Description: N-Channel 60V 300mA (Ta) 250mW (Ta) Surface Mount SOT-323
Datasheet: A2N7002HW-HF Datasheet (PDF)
Price (USD)
1: USD 0.4125 ea
Line Total: USD 0.41 
Availability - 0
  
QtyUnit Price
1$ 0.4125
10$ 0.2788
100$ 0.1692
500$ 0.0968
1000$ 0.0726
3000$ 0.0594
6000$ 0.0539
9000$ 0.0462
24000$ 0.0451

Availability 0
Ship by Thu. 31 Jul to Wed. 06 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1371


Availability 0
Ship by Tue. 29 Jul to Thu. 31 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4125
10$ 0.2788
100$ 0.1692
500$ 0.0968
1000$ 0.0726
3000$ 0.0594
6000$ 0.0539
9000$ 0.0462
24000$ 0.0451

   
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the A2N7002HW-HF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A2N7002HW-HF and other electronic components in the MOSFETs category and beyond.

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MOSFET A2N7002HW-HF N-Channel RoHS Device Halogen Free Features - Low on-resistance. SOT-323 1: Gate - ESD protected gate up to 2KV HBM. 2: Source 3: Drain - High-speed switching. 0.087(2.20) 0.079(2.00) - Drive circuits can be simple. 3 - Parallel use is easy. 0.053(1.35) 0.045(1.15) - AEC-Q101 Qualied. 1 2 0.055(1.40) 0.047(1.20) Mechanical data - Case: SOT-323, molded plastic. 0.006(0.15) 0.002(0.05) - Molding compound, UL ammability classication 0.004(0.10) 0.094(2.40) 0.001(0.02) rating 94V-0. 0.087(2.20) - Terminals: Matte tin plated leads, solderable per 0.043(1.10) 0.035(0.90) MIL-STD-202, method 208. 0.014(0.35) 0.016(0.40) 0.010(0.25) 0.006(0.15) Circuit Diagram Dimensions in inches and (millimeter) Drain Gate Source Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS 20 V Continuous drain current ID 300 mA Pulsed drain current (Note 4) tp = 10s IDM 2000 mA Power dissipation PD 0.25 W Thermal resistance junction to ambient air R JA 500 C/W Thermal resistance junction to lead R JL 313 C/W Thermal resistance junction to case R JC 261 C/W Operating junction temperature range TJ -55 to +150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR12 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit O Characteristics Drain-source breakdown voltage VGS = 0V, ID = 250A VDSS 60 V Drain-source leakage current VDS = 60V, VGS = 0V A IDSS 1 Gate-body leakage A IGSS VGS = 20V, VDS = 0V 10 On Characteristics (Note 2) VGS = 5V, ID = 0.05A 1.5 3 RDS(ON) Static drain-source on resistance VGS = 10V, ID = 0.5A 1.45 2.5 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 1 1.5 2.5 Dynamic Characteristics (Note 3) Input capacitance Ciss 41 Output capacitance Coss VGS = 0V, VDS = 20V, f = 1MHZ 15 pF Reverse transfer capacitance Crss 4 Switching Characteristics (Note 3) Turn-on delay time td(on) 6 VDD = 30V, ID = 0.2A, Turn-on rise time tr 5 VGS = 10V, RG = 25, nS Turn-o delay time td(o) 25 RL = 150 Turn-o fall time tf 15 Drain-Source Diode Characteristics Diode forward voltage (Note 1) IS = 0.3A, VGS = 0V VSD 0.85 1.2 V Diode continuous forward current TC =25C IS 0.3 A Notes: 1. Surface mounted on FR4 board, t 10 sec. 2. Pulse width 300s, duty cycle 2%. 3. Guaranteed by design, not subject to production. 4. Pulse width limited by maximum junction temperature. Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR12 Page 2 Comchip Technology CO., LTD.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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