Product Information

ASS8050-J-HF

ASS8050-J-HF electronic component of Comchip

Datasheet
Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 300mW Surface Mount SOT-23

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

Stock Image

ASS8050-J-HF
Comchip

3000 : USD 0.0825
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

ASS8050-J-HF
Comchip

1 : USD 0.6441
10 : USD 0.4153
100 : USD 0.104
1000 : USD 0.0497
3000 : USD 0.0418
9000 : USD 0.0368
24000 : USD 0.0358
45000 : USD 0.0348
99000 : USD 0.0328
N/A

Obsolete
     
Manufacturer
Product Category
Package / Case
Series
Packaging
Part Status
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Vce Saturation Max Ib Ic
Current - Collector Cutoff Max
Dc Current Gain Hfe Min Ic Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Supplier Device Package
LoadingGif

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General Purpose Transistors ASS8050-L-HF Thru. ASS8050-H-HF (NPN) RoHS Device Halogen Free Features SOT-23 - Epoxy meets UL-94 V-0 ammability rating. 0.118(3.00) - Moisture sensitivity Level 1. 0.110(2.80) 3 - AEC-Q101 Qualied. 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Mechanical data 0.008(0.20) 0.004(0.10) - Case: SOT-23, molded plastic. 0.004(0.10) 0.100(2.55) 0.000(0.00) 0.089(2.25) - Terminals: Tin plated leads, solderable per 0.041(1.05) J-STD-002 and JESD22-B102. 0.035(0.90) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in inches and (millimeter) Circuit Diagram 1. Base 2. Emitter 3 3. Collector 1 2 Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current-continuous IC 1.5 A Total device dissipation PD 300 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR13 Page 1 Comchip Technology CO., LTD.General Purpose Transistors Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Symbol Conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10 0A, IE = 0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 100 A, IB = 0 25 V Emitter-base breakdown voltage IE = 100 A, IC = 0 V(BR)EBO 5 V VCB = 40V, IE = 0 nA Collector cut-o current ICBO 100 Collector cut-o current ICEO VCE = 20V, IB = 0 100 nA Emitter cut-o current IEBO VEB = 5V, IC = 0 100 nA hFE(1) VCE = 1V, IC = 100mA 120 350 DC current gain hFE(2) VCE = 1V, IC = 800mA 40 Collector-emitter saturation voltage VCE(sat) IC = 800mA, IB = 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC = 800mA, IB = 80mA 1.2 V Small-signal characteristics Transition frequency VCE = 10Vdc, IC = 50mA, f = 30MHz fT 100 MHz Classication of hFE (1) Rank ASS8050-L-HF ASS8050-H-HF Range 120-200 200-350 Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR13 Page 2 Comchip Technology CO., LTD.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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