MOSFET CMS40N03H8-HF N-Channel RoHS Device Halogen Free PR-PAK Features - Low on-resistance. 0.197(5.00) 0.161(4.10) 0.012(0.30) 0.189(4.80) 0.146(3.70) - Low miller charge. 0.008(0.20) D D D D 8 7 6 5 - Low input capacitance. - 100% EAS and Rg guaranteed. 0.138(3.50) REF. 0.244(6.20) 0.232(5.90) 0.232(5.90) 0.224(5.70) - Green device available. 0.043(1.10) REF. 1 2 3 4 Mechanical data S S S G 0.008(0.20) 0.024(0.60) 0.020(0.51) 0.050(1.27) 0.002(0.06) 0.012(0.30) Nom. Nom. - Case: PR-PAK 0.004(0.10) 0.000(0.00) Circuit Diagram 0.045(1.15) 0.033(0.85) D - G : Gate - S : Source - D : Drain G Dimensions in inches and (millimeter) S Maximum Ratings Parameter Symbol Value Unit Conditions Drain-source voltage VDS 30 V Gate-source voltage VGS 20 V TC = 25C ID 40 Continuous drain current A TC = 70C ID 40 Pulsed drain current (Note 1) IDM 100 A TA = 25C ID 31 Continuous drain current A TA = 70C 25 ID TC = 25C PD 36 Total power dissipation W TA = 25C PD 4.2 Single pulse avalanche energy, L=0.1mH EAS 72 mJ Single pulse avalanche current, L=0.1mH 38 A IAS Operating junction and storage temperature range TJ, TSTG -55 to +150 C R JA Thermal resistance junction-ambient (Note 2) Steady state 30 C/W Thermal resistance junction-case (Note 2) Steady state R JC 3.5 C/W Notes: 1. The data tested by pulsed, pulse width 300s, duty cycle 2%. 2. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by desgn while R CA is determined by the users board design. RJA shown below for single device operation on FR-4 in still air. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR101 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TJ=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250A BVDSS 30 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 1.15 2.2 gfs VDS = 15V, ID = 19A Forward transconductance (Note 1) 82 S Gate-source leakage current IGSS VGS = 20V 100 nA Drain-source leakage current VDS = 30V, VGS = 0V A IDSS 1 VGS = 10V, ID = 19A 3.3 4.5 Static drain-source on-resistance (Note 1) RDS(on) m VGS = 4.5V, ID = 16A 4.6 5.6 Total gate charge (Note 1) Qg 12 Gate-source charge Qgs ID = 19A, VDS = 15V, VGS = 4.5V 6 nC Gate-drain (miller) charge Qgd 5 Turn-on delay time (Note 1) td(on) 24 Rise time tr 21 VDS = 15V, ID = 10A nS VGS = 4.5V, RG = 1, RL = 1.5 Turn-off delay time td(off) 25 Fall time tf 17 Input capacitance Ciss 1750 VGS = 0V, VDS = 15V, f = 1MHZ pF Output capacitance Coss 360 Reverse transfer capacitance Crss 150 Rg Gate resistance f = 1MHZ 3.2 5.0 Source-drain diode Diode forward voltage (Note 1) VSD IS = 10A, VGS = 0V 0.8 1.2 V Continuous source current (Note 1) IS 40 A Reverse recovery time trr 25 nS IF = 10A , TJ=25C dl/dt = 100A/s Reverse recovery charge Qrr nC 17 Guaranteed avalanche characteristics Single pulse avalanche energy (Note 2) EAS VDD = 20V, L=0.1mH, IAS = 31A 48 mJ Notes: 1. The data tested by pulsed, pulse width 300s, duty cycle 2%. 2. The min. value is 100% EAS tested guarantee. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR101 Page 2 Comchip Technology CO., LTD.