General Purpose Transistors MMBT4401-HF (NPN) RoHS Device Halogen Free Features - Power dissipation of 300mW. SOT-23 - High stability and high reliability. 1. Base 2. Emitter 0.118(3.00) 3. Collector 0.110(2.80) 3 0.055(1.40) Mechanical data 0.047(1.20) 1 2 - Case: SOT-23, molded plastic. 0.079(2.00) 0.071(1.80) - Epoxy UL: 94V-0. 0.006(0.15) - Mounting position: Any. 0.003(0.08) 0.100(2.55) 0.041(1.05) 0.089(2.25) 0.035(0.90) 0.004(0.10) Circuit Diagram 0.000(0.00) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Collector 3 Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 600 mA Collector power dissipation PC 300 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Thermal resistance from junction to ambient RJA 417 C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR91 Page 1 Comchip Technology CO., LTD.General Purpose Transistors Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Unit Collector-base breakdown voltage V(BR)CBO IC = 100A, IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB = 0 40 V Emitter-base breakdown voltage V(BR)EBO IE = 100A, IC = 0 6 V nA Collector cut-o current ICBO VCB = 50V, IE = 0 100 nA Collector cut-o current ICEX VCE = 35V, VEB(o) = 0.4V 100 VEB = 5V, IC = 0 nA Emitter cut-o current IEBO 100 VCE = 1V, IC = 0.1mA hFE1 20 VCE = 1V, IC = 1mA hFE2 40 DC current gain hFE3 VCE = 1V, IC = 10mA 80 hFE4 VCE = 1V, IC = 150mA 100 300 VCE = 1V, IC = 500mA hFE5 40 IC = 150mA, IB = 15mA 0.40 V Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 0.75 V IC = 150mA, IB = 15mA 0.95 V Base-emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA 1.20 V VCE = 10V, IC = 20mA, Transition frequency fT 250 z f = 100MHz Delay time td 15 ns VCC = 30V, VBE(o) = -2V, IC = 150mA, IB1 = 15mA tr ns Rise time 20 Storage time ns tS 225 VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA ns Fall time tf 60 Rating and Characteristic Curves (MMBT4401-HF) Fig.1 - Static Characteristic Fig.2 - hFE I C 250 1000 COMMON COMMON EMITTER EMITTER VCE = 1V Ta=25C 1mA Ta=100C 200 0.9mA 0.8mA 0.7mA 150 Ta=25C 0.6mA 100 0.5mA 100 0.4mA 0.3mA 50 0.2mA IB=0.1mA 0 10 0 1 2 3 4 1 10 100 600 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR91 Page 2 Comchip Technology CO., LTD. Collector Current, IC (mA) DC Current Gain, hFE