Product Information

C9012B

Product Image X-ON

Datasheet
Transistors (NPN/PNP) 500mA 20V TO-92 RoHS
Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0327 ea
Line Total: USD 0.654

4840 - Global Stock
Ships to you between
Thu. 22 Jun to Tue. 27 Jun
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
4820 - Global Stock


Ships to you between
Thu. 22 Jun to Tue. 27 Jun

MOQ : 20
Multiples : 20

Stock Image

C9012B
FeiHong

20 : USD 0.0327
200 : USD 0.0263
1000 : USD 0.0205
2000 : USD 0.0183
10000 : USD 0.0164
20000 : USD 0.0155

Read More Specifications

     
Manufacturer
FeiHong
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors-BJT
Rohs
y
Package
TO - 92
Brand Category
Feihong
Current - Collector Ic Max
500 mA
Voltage - Collector Emitter Breakdown Max
20 V
Power - Max
625 mW
Collector Cut-Off Current Icbo
100 nA
Collector-Emitter Breakdown Voltage Vceo
20 V
Power Dissipation Pd
625 mW
Collector Current Ic
500 mA
Dc Current Gain Hfe@Ic Vce
-
Transition Frequency Ft
-
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
180 mV @500 mA , 50 mA
Transistor Type
-
Operating Temperature
+ 150 C @ (Tj)
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Additional Infomation About Product

TRANSISTOR C9012B MAIN CHARACTERISTICS FEATURES IC -500mA Epitaxial silicon VCEO - 20V High switching speed PC 625mW C9013B Complementary to C9013B RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform Package TO-92 ABSOLUTE RATINGS (Tc=25 ) Parameter Symbol Value Unit VCBO -40 V Collector- Base Voltage IE=0 VCEO -20 V Collector- Emitter Voltage IB=0 VEBO -5 V Emitter-Base VoltageIC=0 IC -500 mA Collector Current DC PC 625 mW Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=-100uA,IE=0 -40 - - V V(BR)CEO IC=-1mA,IB=0 -20 - - V V(BR)EBO IE=-100uA,IC=0 -5 - - V ICBO VCB=-25V, IE=0 - - -0.1 A IEBO VEB=-3V, IC=0 - - -0.1 A Hfe(1) VCE =-1V, IC=-50mA 64 - 276 - Hfe(2) VCE =-1V, IC=-500mA 40 - - - VCE(sat) IC=-500mA, IB=-50mA - -0.18 -0.6 V VBE(sat) IC=-500mA, IB=-50mA - -0.95 -1.2 V HFE Classifications HFE Classifications D E F G H I HFE Range 64-91 78-112 96-135 112-166 144-202 188-276 2 Ver-1.0

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,