Product Information

C9012B

Product Image X-ON

Datasheet
Transistors (NPN/PNP) 500mA 20V TO-92 RoHS

Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0327 ea
Line Total: USD 0.654

4840 - Global Stock
Ships to you between
Thu. 22 Jun to Tue. 27 Jun
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
4820 - Global Stock


Ships to you between
Thu. 22 Jun to Tue. 27 Jun

MOQ : 20
Multiples : 20

Stock Image

C9012B
FeiHong

20 : USD 0.0327
200 : USD 0.0263
1000 : USD 0.0205
2000 : USD 0.0183
10000 : USD 0.0164
20000 : USD 0.0155

     
Manufacturer
FeiHong
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors-BJT
Rohs
y
Package
TO - 92
Brand Category
Feihong
Current - Collector Ic Max
500 mA
Voltage - Collector Emitter Breakdown Max
20 V
Power - Max
625 mW
Collector Cut-Off Current Icbo
100 nA
Collector-Emitter Breakdown Voltage Vceo
20 V
Power Dissipation Pd
625 mW
Collector Current Ic
500 mA
Dc Current Gain Hfe@Ic Vce
-
Transition Frequency Ft
-
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
180 mV @500 mA , 50 mA
Transistor Type
-
Operating Temperature
+ 150 C @ (Tj)
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
Stock Image FHP20200A
200V Dual Common Cathode 880mV@10A 10A TO-220 Schottky Barrier Diodes (SBD) ROHS
Stock : 1
Stock Image FHP740A
400V 11A 193.6W 640mO@10V,5.5A N Channel TO-220 MOSFETs ROHS
Stock : 3
Stock Image FHS150N1F4A
New Quadratic Unclassified Data TO-263 RoHS
Stock : 10
Stock Image FHF7N65A
650V 7A 35W 1.3O@10V,3.5A N Channel TO-220F-3 MOSFETs ROHS
Stock : 1
Stock Image FHF10N65B
650V 10A 50W 900mO@10V,5A N Channel TO-220F-3 MOSFETs ROHS
Stock : 4
Stock Image FHF10N65A
650V 10A 50W 900mO@10V,5A N Channel TO-220F-3 MOSFETs ROHS
Stock : 6
Stock Image FHU4N60A
600V 4A 75W 2.1O@10V,2A N Channel TO-251 MOSFETs ROHS
Stock : 5
Stock Image FHF12N65C
650V 12A 54W 750mO@10V,6A N Channel TO-220F-3 MOSFETs ROHS
Stock : 1
Stock Image FHF5N65B
650V 5A 30W 2.8O@10V,2A N Channel TO-220F-3 MOSFETs ROHS
Stock : 15
Stock Image FHP12N60A
600V 12A 231W 750mO@10V,6A N Channel TO-220 MOSFETs ROHS
Stock : 1
Image Description
Stock Image KSP05TA

Bipolar (BJT) Transistor NPN 60 V 500 mA 100MHz 625 mW Through Hole TO-92-3
Stock : 1

Hot Stock Image MMBT4126LT1G

Bipolar (BJT) Transistor PNP 25 V 200 mA 250MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Stock : 1

Stock Image MMBT200

Bipolar Transistors - BJT PNP Transistor General Purpose
Stock : 1

Stock Image BC807DS,115

Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Stock : 1

Stock Image BCP52

Bipolar (BJT) Transistor PNP 60 V 1.2 A 1.5 W Surface Mount SOT-223-4
Stock : 1

Stock Image BC848CDW1T1G

Transistors Bipolar - BJT 100mA 30V Dual NPN
Stock : 1

Stock Image KSC2330YTA

Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
Stock : 1

Stock Image 2SC3326-A,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Stock : 1

Stock Image 2SC4117-BL,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Stock : 1

Stock Image 2N4401

Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Stock : 1

TRANSISTOR C9012B MAIN CHARACTERISTICS FEATURES IC -500mA Epitaxial silicon VCEO - 20V High switching speed PC 625mW C9013B Complementary to C9013B RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform Package TO-92 ABSOLUTE RATINGS (Tc=25 ) Parameter Symbol Value Unit VCBO -40 V Collector- Base Voltage IE=0 VCEO -20 V Collector- Emitter Voltage IB=0 VEBO -5 V Emitter-Base VoltageIC=0 IC -500 mA Collector Current DC PC 625 mW Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=-100uA,IE=0 -40 - - V V(BR)CEO IC=-1mA,IB=0 -20 - - V V(BR)EBO IE=-100uA,IC=0 -5 - - V ICBO VCB=-25V, IE=0 - - -0.1 A IEBO VEB=-3V, IC=0 - - -0.1 A Hfe(1) VCE =-1V, IC=-50mA 64 - 276 - Hfe(2) VCE =-1V, IC=-500mA 40 - - - VCE(sat) IC=-500mA, IB=-50mA - -0.18 -0.6 V VBE(sat) IC=-500mA, IB=-50mA - -0.95 -1.2 V HFE Classifications HFE Classifications D E F G H I HFE Range 64-91 78-112 96-135 112-166 144-202 188-276 2 Ver-1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,