Product Information

FHP13007A

Product Image X-ON

Datasheet
Transistors (NPN/PNP) TO-220 RoHS
Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5028 ea
Line Total: USD 0.5028

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between
Wed. 21 Jun to Mon. 26 Jun

MOQ : 1
Multiples : 1

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FHP13007A
FeiHong

1 : USD 0.5028
10 : USD 0.4162
30 : USD 0.3533
100 : USD 0.3015
500 : USD 0.2926
1000 : USD 0.2883

Read More Specifications

     
Manufacturer
FeiHong
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors-BJT
Rohs
y
Package
TO - 220
Brand Category
Feihong
Collector Cut-Off Current Icbo
100 uA
Collector-Emitter Breakdown Voltage Vceo
400 V
Power Dissipation Pd
80 W
Collector Current Ic
8 A
Dc Current Gain Hfe@Ic Vce
-
Transition Frequency Ft
4MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
1 V @5A , 1A
Transistor Type
-
Operating Temperature
+ 150 C @ (Tj)
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Additional Infomation About Product

TRANSISTOR FHP13007A MAIN CHARACTERISTICS FEATURES IC 8A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 80W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit Package ABSOLUTE RATINGS (Tc=25 ) Parameter Symbol Value Unit VCBO 700 V Collector- Base Voltage IE=0 VCEO 400 V Collector- Emitter Voltage IB=0 VEBO 9 V Emitter-Base Voltage IC=0 IC 8 A Collector Current DC PC 80 W Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature THERMAL CHARACTERISTIC Parameter Symbol (min) (max) Unit Rth(j-a) - 125 /W Thermal Resistance Junction Ambient 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=100uA,IE=0 700 - - V V(BR)CEO IC=10mA,IB=0 400 - V V(BR)EBO IE=1mA,IC=0 9 - - V ICEO VCE=400V, IE=0 - - 300 uA IEBO VEB=9V, IC=0 - - 100 uA VCB=700V, IE=0 ICBO 100 uA Hfe(1) VCE =5V, IC=2A 15 - 40 Hfe(2) VCE =5V, IC=5A 5 - - IC=5A, IB=1A VCE(sat) - - 1.0 V IC=0.5A tS 2 6 us f VCE=10V, Ic=0.5A 4 MHz T hFE Classifications Classifications H1 H2 15-28 26-39 hFE1 2 Ver-1.0

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,