TRANSISTOR TIP42CB MAIN CHARACTERISTICS FEATURES IC -6A Epitaxial silicon VCEO -100V High switching speed PC 65W TIP41CB Complementary to TIP41CB RoHS RoHS product APPLICATIONS Medium Power Linear Switching Applications Package ABSOLUTE RATINGS (Tc=25 ) Parameter Symbol Value Unit VCBO -150 V Collector- Base Voltage IE=0 VCEO -100 V Collector- Emitter Voltage IB=0 VEBO -7 V Emitter-Base Voltage IC=0 IC -6 A Collector Current DC PC 65 W Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature THERMAL CHARACTERISTIC Parameter Symbol (min) (max) Unit Rth(j-a) - 125 /W Thermal Resistance Junction Ambient 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=-100uA,IE=0 -100 - - V V(BR)CEO IC=-10mA,IB=0 -100 - V V(BR)EBO IE=-1mA,IC=0 -7 - - V ICEO VCB=-60V, IE=0 - - -0.7 mA IEBO VEB=-5V, IC=0 - - -1 mA Hfe(1) * VCE =-4V, IC=-3A 15 - 80 Hfe(2) * VCE =-4V, IC=-0.3A 30 - - VCE(sat) * IC-6A, IB=-0.6A - - -1.5 V VBE(sat) * IC=-6A, IB=-0.6A - - -2.0 V VCE=-10V, Ic=-0.5A,f=1MHz f 3.0 MHz T *Pulse Test: PW300ms, Duty Cycle2% 2 Ver-1.0