GOFORD G30N03D3 N-Channel Trench MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. General Features Schematic Diagram V 30V DS I (at V = 10V) 30A D GS R (at V = 10V) < 7m DS(ON) GS R (at V = 4.5V) < 12m DS(ON) GS 100% Avalanche Tested RoHS Compliant Marking and pin assignment Application Power switch DC/DC converters DFN3*3-8L Device Package Marking Packaging G30N03D3 DFN3*3 -8L G30N03 4000pcs/Reel Absolute Maximum Ratings T = 25C, unless otherwise noted C Parameter Symbol Value Unit Drain-Source Voltage V 30 V DS Continuous Drain Current I 30 A D Pulsed Drain Current (note1) I 120 A DM Gate-Source Voltage V 20 V GS Power Dissipation P 24 W D Operating Junction and Storage Temperature Range T , T -55 To 150 C J stg Thermal Resistance Parameter Symbol Value Unit C/W Thermal Resistance, Junction-to-Ambient R 24 thJA C/W Thermal Resistance, Junction-to-Case R 4.2 thJC www.gofordsemi.com TEL 0755-29961262 TFX:0755-29961466GOFORD G30N03D3 Specifications T = 25C, unless otherwise noted J Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V V = 0V, I = 250A 30 -- -- V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 30V, V = 0V, T = 25C -- -- 1 A DSS DS GS J Gate-Source Leakage I -- -- nA V = 20V 100 GSS GS Gate-Source Threshold Voltage V V = V , I = 250A 1 1.4 2.5 V GS(th) DS GS D V = 10V, I = 20A -- 5.2 7 GS D Drain-Source On-Resistance R m DS(on) V = 5V, I = 15A -- 7 12 GS D Forward Transconductance g VDS=5V,ID=20A -- 40 -- S FS Dynamic Parameters Input Capacitance C -- 825 -- iss V = 0V, GS Output Capacitance C V = 15V, -- 335 -- pF oss DS f = 1.0MHz Reverse Transfer Capacitance C -- 40 -- rss Total Gate Charge Q -- 13 -- g V = 15V, DD Gate-Source Charge Q I = 20A, -- 2.2 -- nC gs D V = 10V GS Gate-Drain Charge Q -- 2.6 -- gd Turn-on Delay Time t -- 5 -- d(on) Turn-on Rise Time t V = 15V, -- 3 -- r DD I = 20A, nS D Turn-off Delay Time t R = 3 -- 20 -- d(off) G Turn-off Fall Time t -- 3 -- f Drain-Source Body Diode Characteristics Continuous Body Diode Current I -- -- 30 S T = 25C A C Pulsed Diode Forward Current I -- -- 120 SM Body Diode Voltage V T = 25C, I = 20A, V = 0V -- -- 1.2 V SD J SD GS Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G www.gofordsemi.com TEL 0755-29961262 TFX:0755-29961466