Product Information

G30N03D3

G30N03D3 electronic component of GOFORD

Datasheet
MOSFET DFN3*3-8L RoHS
Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1857 ea
Line Total: USD 0.93

3428 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
3040 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 5
Multiples : 5

Stock Image

G30N03D3
GOFORD

5 : USD 0.1435
50 : USD 0.1276
150 : USD 0.1208
500 : USD 0.1123
2500 : USD 0.0906
5000 : USD 0.0883

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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Additional Infomation About Product

The G30N03D3 is a metal oxide semiconductor field-effect transistor (MOSFET) manufactured by GOFORD. The device is a dual-gate, N-channel MOSFET housed in a miniature 3-pin dual flat no-leading (DFN3*3-8L) surface-mount package. It is compliant with the Restriction of Hazardous Substances (RoHS) directive.The G30N03D3 has an operating temperature range of -55°C to +170°C, with low on-resistance of 16 mO and a maximum current rating of 30A. This device is suitable for a variety of applications, including battery-powered systems, LED lighting, and low-voltage DC/DC converters.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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