X-On Electronics has gained recognition as a prominent supplier of LP2305DSLT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LP2305DSLT1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LP2305DSLT1G Leshan

Name: LP2305DSLT1G
Brand: Leshan
SKU: LP2305DSLT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LP2305DSLT1G electronic component of Leshan

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See Product Specifications

Part No.	LP2305DSLT1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET P Trench 12V 4A 800mV @ 250uA 68 mÎ© @ 3.5A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet:	LP2305DSLT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0616 ea
Line Total: USD 1.23

Availability - 42311
Ship by Tue. 24 Jun to Fri. 27 Jun

MOQ: 20 Multiples: 20
Pack Size: 20

LP2305DSLT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

42311

Ship by Tue. 24 Jun to Fri. 27 Jun

MOQ : 20
Multiples : 20

20 : USD 0.0616
200 : USD 0.0478
600 : USD 0.0302
3000 : USD 0.024
9000 : USD 0.0214
21000 : USD 0.0198

Specifications

Manufacturer

Leshan Leshan

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

Leshan Leshan

Fet Type

p trench p trench

Drain To Source Voltagevdss

12 V 12 V

Continuous Drain Current Id @ 25°C

4 A 4 A

Vgsth Max @ Id

800mv @ 250ua 800mv @ 250ua

Rds On Max @ Id Vgs

68 m @ 3.5a,4.5v 68 m @ 3.5a,4.5v

Power Dissipation-Max Ta

1.1 W 1.1 W

Drain Source Voltage Vdss

12 V 12 V

Continuous Drain Current Id

4 A 4 A

Drain Source On Resistance Rdson@Vgs Id

68 mOhms @4.5V , 3.5A 68 mOhms @4.5V , 3.5A

Power Dissipation Pd

1.1 W 1.1 W

Gate Threshold Voltage Vgsth@Id

800 mV @250uA 800 mV @250uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

LP2305DSLT1G Alternative Parts

We are delighted to provide the LP2305DSLT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LP2305DSLT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio CompanyThe LP2305DSLT1G is a MOSFET P Trench 12V 4A 800mV @ 250uA 68 mÎ© @ 3.5A,4.5V RoHS manufactured by Leshan Radio Company, provided in an SOT-23-3 package. It is a three-pin, surface-mount, ultra-small and low-on-resistance device designed to switch 12V at up to 4A in a low-power, high-efficiency environment. The chip has an on-state resistance of 68 mÎ© with a VGS rating of 4.5V, and a maximum gate threshold voltage of 800mV with a gate-source leakage current of 250uA. The chip is also RoHS compliant and ideal for converter, SMPS, and other similar applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Leshan Radio may also be referenced as

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42311 Ship by Tue. 24 Jun to Fri. 27 Jun MOQ : 20 Multiples : 20	20 : USD 0.0616 200 : USD 0.0478 600 : USD 0.0302 3000 : USD 0.024 9000 : USD 0.0214 21000 : USD 0.0198

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