X-On Electronics has gained recognition as a prominent supplier of LSI1012LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LSI1012LT1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LSI1012LT1G Leshan

LSI1012LT1G electronic component of Leshan
LSI1012LT1G Leshan
LSI1012LT1G MOSFETs
LSI1012LT1G  Semiconductors

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See Product Specifications
Part No. LSI1012LT1G
Manufacturer: Leshan
Category: MOSFETs
Description: MOSFET N Trench 20V 500mA 900mV @ 250uA 700 mΩ @ 600mA,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet: LSI1012LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0446 ea
Line Total: USD 0.89 
Availability - 15015
Ship by Thu. 26 Jun to Tue. 01 Jul
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
15015
Ship by Thu. 26 Jun to Tue. 01 Jul
MOQ : 20
Multiples : 20
20 : USD 0.0446
200 : USD 0.04
600 : USD 0.0282
3000 : USD 0.0243
9000 : USD 0.0234
21000 : USD 0.0229

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the LSI1012LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LSI1012LT1G and other electronic components in the MOSFETs category and beyond.

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Radio CompanyThe LSI1012LT1G is a MOSFET N Trench enhancement-mode logic level field effect transistor with a Schottky diode. It is manufactured by Leshan Radio Company, and comes in a SOT-23-3 (RoHS) package. The voltage and current ratings for this device are as follows: 20 Volts maximum drain-source voltage, 500 milliamperes (mA) maximum drain current, 900 millivolts (mV) gate-source threshold voltage at 250 microamperes (uA) drain-source current, 700 milliohms (mΩ) maximum drain-source resistance at 600 mA; gate-source protection diode trigger voltage VGS=4.5V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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